Phitips Semiconductors Product specification Low-voltage avalanche regulator double PLVA2600A series diodes FEATURES PINNING Very low dynamic impedance at PIN DESCRIPTION low currents: approximately 1% of conventional series 1 cathode (k1) e Hard breakdown knee 2 cathode (k2) . . 3 common anode e Low noise: approximately 149 of conventional series e Total power dissipation: max. 250 mW e Smail tolerances of Vz 2 1 Working voltage range: nom. 5.0 to 6.8 V Non-repetitive peak reverse power 2 1 dissipation: max. 30 W. APPLICATIONS . MAM24S Top view e Low current, low power, low noise applications CMOS RAM back-up circuits Voltage stabilizers Voltage limiters Fig.1 Simplified outline (SOT23) and symbol. Smoke detector relays. MARKING DESCRIPTION TYPE NUMBER MARKING CODE The PLVA2600A seri ists of PLVAZE5OA pad e series consists 0 AD65S two high performance voltage PLY. A pak regulator diodes with common PLVA2656A pol anodes, in small plastic SMD SOT23 PLVA2659A. p9M packages. PLVA2662A poN The series consists of PLVA2650A to PLVA2665A . p90 PLVA2668A. PLVA2668A pgp 1996 May 06 7-70Philips Semiconductors / : : Product specification Low-voltage avalanche regulator double . g 9 PLVA2600A series diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT le continuous forward current - 250 |mA I7RM repetitive peak working current tp = 100 ps; 8 = 10% 250 |mA Pzsm non-repetitive peak reverse power dissipation | tp = 100 js; T; = 150 C 30 |W Prot total power dissipation single diode loaded; - 250 | mW Tamp = 25 C; note 1 double diode loaded; - 180 | mw Tamb = 25 C; note 1 Tstg storage temperature -65 +150 |C Tj junction temperature - 150 |C Note 1. Device mounted on an FR4 printed circuit-board. 1996 May 06 7-714Philips Semiconductors Product specification Low-voltage avalanche regulator double PLVA2600A series diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Ve forward voltage lp = 10 mA - - 0.9 IV Vz working voltage lz = 250 pA PLVA2650A 4.80 5.00 5.20 |V PLVA2653A 5.10 5.30 5.50 |V PLVA2656A 5.40 5.60 5.80 |V PLVA2659A 5.70 5.90 6.10 |V PLVA2662A 6.00 6.20 6.40 |V PLVA2665A 6.30 6.50 6.70 |V PLVA2668A 6.60 6.80 7.00 |V Vz working voltage Iz=10 pA PLVA2650A - 4.30 - Vv PLVA2653A - 5.20 - Vv PLVA2656A - 5.51 - Vv PLVA2659A - 5.85 - Vv PLVA2662A - 6.19 ~ Vv PLVA2665A - 6.49 ~ Vv PLVA2668A - 6.80 - Vv Rz dynamic resistance 1 kHz superimposed; PLVA2650A Izac is 10% of Izpc; Iz = 250 HA _ _ 700 |Q PLVA2653A ~ - 250 |Q PLVA2656A to PLVA2668A - - 100 {Q Sz temperature coefficient Iz = 250 pA PLVA2650A - 0.20 - mv/K PLVA2653A - 1.60 - mvV/K PLVA2656A - 1.90 - mV/K PLVA2659A - 2.40 - mvV/K PLVA2662A - 2.65 - mV/K PLVA2665A ~ 2.90 - mvV/K PLVA2668A - 3.40 - mV/K Ip reverse current Ve = 80% Vz nominal PLVA2650A - - 20000 | nA PLVA2653A - - 5000 | nA PLVA2656A ~ - 1000 | nA PLVA2659A - - 500 [nA PLVA2662A ~ - 100 [nA PLVA2665A - - 50 [nA PLVA2668A ~ - 10 |nA 1996 May 06 7-72Philips Semiconductors . Product.specification Low voltage avalanche regulator double PLVA2600A series diodes SYMBOL PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT IR reverse current Vr = 50% Vz nominal PLVA2650A - 34 _ nA PLVA2653A - 22 ~ nA PLVA2656A - 1.1 ~ nA PLVA2659A - 0.9 - nA PLVA2662A - 0.9 - nA PLVA2665A - 0.9 - nA PLVA2668A - 0.8 - nA Ir reverse current Vr = 90% Vz nominal PLVA2650A ~ 21 ~ pA PLVA2653A - 3.5 - pA PLVA2656A - 1.3 - pA PLVA2659A - 1.0 - {pA PLVA2662A - 0.05 - {pA PLVA2665A - 0.04 - pA PLVA2668A ~ 0.006 - pA AVz line regulation PLVA2659A to PLVA2668A_ | ILo = 10 HA; Ij = 1 MA - - 01 =|V PLVA2656A ILo = 50 pA; I4j = 1 MA - - 0.1 Vv PLVA2650A Io = 100 LA: j= 1 mA - - 04 |V PLVA2653A Lo = 100 pA: Iyi = 1 mA - - 02 |V Vn noise voltage density f= 1kHz; B= 1 kHz; Iz = 250A ~ - 1.0 | pv JHz THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rit j-tp thermal fesistance from junction to tie-point , , 360 K/wW Rihj-a thermal resistance from junction to ambient | note 1 500 K/W Note 1. Device mounted on an FR4 printed circuit-board. 1996 May 06 7-73