1N5059 to 1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features * * * * * * * Controlled avalanche characteristics Glass passivated e2 Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949539 Applications Mechanical Data Rectification diode, general purpose Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part Type differentiation Package 1N5059 VR = 200 V; IFAV = 2 A SOD-57 1N5060 VR = 400 V; IFAV = 2 A SOD-57 1N5061 VR = 600 V; IFAV = 2 A SOD-57 1N5062 VR = 800 V; IFAV = 2 A SOD-57 Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part Symbol Value Unit 1N5059 VR = VRRM 200 V 1N5060 VR = VRRM 400 V 1N5061 VR = VRRM 600 V 1N5062 VR = VRRM 800 V Peak forward surge current tp = 10 ms, half-sinewave IFSM 50 A Average forward current RthJA = 45 K/W, Tamb = 50 C IFAV 2 A RthJA = 100K/W, Tamb = 75 C IFAV 0.8 A Tj = T stg - 55 to + 175 C ER 20 mJ Junction and storage temperature range Max. pulse energy in avalanche mode, non repetitive (inductive load switch off) Document Number 86000 Rev. 1.5, 13-Apr-05 I(BR)R = 1 A, indicutive load www.vishay.com 1 1N5059 to 1N5062 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit Lead length l = 10 mm, TL = constant RthJA 45 K/W on PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 C, unless otherwise specified Max Unit Forward voltage Parameter IF = 1 A Test condition VF 1 V IF = 2.5 A VF 1.15 V Reverse current VR = VRRM IR 1 A VR = VRRM, Tj = 100 C IR 10 A VR = VRRM, Tj = 150 C IR 100 A IR = 100 A Reverse breakdown voltage Part Symbol Min Typ. 1N5059 V(BR)R 225 1600 V 1N5060 V(BR)R 450 1600 V 1N5061 V(BR)R 650 1600 V 1N5062 V(BR)R 900 1600 V Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr Diode capacitance VR = 0 V, f = 1 MHz CD 4 40 s pF Typical Characteristics (Tamb = 25 C unless otherwise specified) 1000 PR - Reverse Power Dissipation ( mW ) 200 R thJA = 160 1N5062 45 K/W 120 100 K/W 1N5060 1N5059 40 15764 1N5061 160 K/W 80 0 25 I R - Reverse Current ( A ) V R = VRRM 100 10 1 0.1 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.com 2 V R = VRRM 25 15765 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Figure 2. Max. Reverse Current vs. Junction Temperature Document Number 86000 Rev. 1.5, 13-Apr-05 1N5059 to 1N5062 Vishay Semiconductors 50 V R = VRRM half sinewave 1.8 1.6 R thJA = 45 K/W l =10 mm 1.4 1.2 1.0 0.8 0.6 RthJA = 100 K/W PCB: d = 25 mm 0.4 0.2 0.0 0 15763 f =1 MHz C D - Diode Capacitance ( pF ) I FAV - Average Forward Current ( A ) 2.0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 40 30 20 10 0 0.1 1 10 100 V R - Reverse Voltage ( V ) 15766 Figure 5. Typ. Diode Capacitance vs. Reverse Voltage IF - Forward Current ( A ) 100 10 Tj = 175 C Tj = 25C 1 0.1 0.01 0.001 0 15762 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V F - Forward Voltage ( V ) Figure 4. Max. Forward Current vs. Forward Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. Document Number 86000 Rev. 1.5, 13-Apr-05 4.0 (0.156) max. 26(1.014) min. www.vishay.com 3 1N5059 to 1N5062 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86000 Rev. 1.5, 13-Apr-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1