MBR2030CT thru 2060CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
MBR
2030CT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
20
150
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 3)
R
0JC
2.0
C/W
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage (Note 1) V
Voltage Rate of Change (Rated VR)
T
J
=125 C
T
J
=25 C
I
F
=10A @
I
F
=10A @
I
F
=20A @
I
F
=20A @ T
J
=125 C
dv/dt
-
0.57
0.84
0.72
I
R
@T
J
=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ
=25 C 0.1
15
mA
T
C
=125 C
V/us
MBR
2035CT
35
24.5
35
MBR
2040CT
40
28
40
MBR
2045CT
45
31.5
45
MBR
2050CT
50
35
50
MBR
2060CT
60
42
60
10000
0.80
0.70
0.95
0.85
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.22 15.88
10.67 9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 6.35
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64
0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
13
2
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE
- 30
to
60
Volts
FORWARD CURRENT
- 20
Amperes
Typical Junction Capacitance
per element (Note 2)
C
J
300 400
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
pF
T
J
=25 C
SEMICONDUCTOR
LITE-ON
REV. 4, Aug-2007, KTHC08
RATING AND CHARACTERISTIC CURVES
MBR2030CT thru MBR2060CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
15 10 50 100
220
0
25
50
75
100
125
150
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
75 100 125 150
5
0
50
20
175
8.3ms Single Half-Sine-Wave
15
0
10
RESISTIVE OR
INDUCTIVE LOAD
CASE TEMPERATURE , C
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0
0.01
1.0
10
1000
100
60 80 100
T
J
= 100 C
0.1
T
J
= 25 C
T
J
= 75 C
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.3 0.7 0.8
1.0
10
100
0.4 0.5 0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
MBR2030CT ~ MBR2045CT
MBR2050CT ~ MBR2060CT
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
10000
1000
100
0.1 4
MBR2030CT ~ MBR2045CT
MBR2050CT ~ MBR2060CT
T
J
= 25 C, f= 1MHz
