IRF720 Data Sheet July 1999 3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17404. Ordering Information PART NUMBER File Number 1579.4 Features * 3.3A, 400V * rDS(ON) = 1.800 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol PACKAGE BRAND D IRF720 TO-220AB IRF720 NOTE: When ordering, use the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 IRF720 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRF720 400 400 3.3 2.1 13 20 50 0.4 190 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V, (Figure 10) 400 - - V Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250A 2.0 - 4.0 V Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time VDS = Rated BVDSS, VGS = 0V - - 25 A VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 A VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 3.3 - - A - - 100 nA VGS = 20V ID = 1.8A, VGS = 10V, (Figures 8, 9) VDS 10V, ID = 2.0A, (Figure 12) VDD = 200V, ID 3.3A, RGS = 18, VGS = 10V, RL = 59 MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA, (Figure 14) Gate Charge is Essentially Independent of Operating Temperature VDS = 25V, VGS = 0V, f = 1MHz, (Figure 10) Measured From the Contact Modified MOSFET Screw on Tab to Center of Die Symbol Showing the Internal Device Measured From the Drain Inductances Lead, 6mm (0.25in) From LS Measured From the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad 1.5 1.8 2.7 - S - 10 15 ns - 14 21 ns - 30 45 ns - 13 20 ns - 12 20 nC - 2.0 - nC - 6.0 - nC - 360 - pF - 55 - pF - 20 - pF - 3.5 - nH - 4.5 - nH - 7.5 - nH - - 2.5 oC/W - - 80 oC/W D Package to Center of Die Internal Source Inductance 1.7 LD G LS S Thermal Resistance, Junction to Case RJC Thermal Resistance, Junction to Ambient RJA 4-2 Free Air Operation IRF720 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier ISDM D MIN TYP MAX UNITS - - 3.3 A - - 13 A - - 1.6 V 120 - 600 ns 0.64 - 3.0 C G S Source to Drain Diode Voltage (Note 2) TJ = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13) VSD Reverse Recovery Time TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/s trr Reverse Recovery Charge QRR NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 31H, RGS = 25, peak IAS = 3.3A. Typical Performance Curves Unless Otherwise Specified 5 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 50 100 4 3 2 1 0 25 150 50 TC, CASE TEMPERATURE (oC) 75 100 150 125 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 3.0 ZJC, TRANSIENT THERMAL IMPEDANCE (oC/W) POWER DISSIPATION MULTIPLIER 1.2 0.5 1.0 0.2 0.1 PDM 0.05 0.1 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 0.1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 4-3 1 10 IRF720 Typical Performance Curves Unless Otherwise Specified (Continued) 100 5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10s 10 100s 1ms 1 10ms TJ = MAX RATED TC = 25oC SINGLE PULSE 0.1 1 VGS = 10V 4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 3 VGS = 5.5V 2 VGS = 5.0V 1 VGS = 4.0V 0 103 0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6.0V 3 VGS = 5.5V 2 VGS = 5.0V 1 VGS = 4.0V 6 12 9 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V 1 TJ = 150oC 0.01 0 15 2 rDS(ON), NORMALIZED ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE 3.0 8 VGS = 20V 4 VGS = 10V 2 0 3 6 9 12 ID, DRAIN CURRENT (A) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4-4 8 10 FIGURE 7. TRANSFER CHARACTERISTICS PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0 6 4 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 6 TJ = 25oC 0.1 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 200 VGS = 4.5V 0 3 160 FIGURE 5. OUTPUT CHARACTERISTICS VGS = 10V 4 120 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 80 40 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 0 VGS = 4.5V DC 10 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 VGS = 6.0V 15 2.4 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID =1.8A 1.8 1.2 0.6 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRF720 Typical Performance Curves NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 Unless Otherwise Specified (Continued) 1000 ID = 250A 1.15 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS C, CAPACITANCE (pF) 800 1.05 0.95 600 CISS 400 COSS CRSS 0.85 200 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 0 160 1 2 TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 102 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 4 TJ = 25oC 3 2 TJ = 150oC 1 0 0 1 2 3 4 10 TJ = 150oC 1 0.1 5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.8 VDS = 320V 16 VDS = 80V 12 8 VDS = 200V 4 0 4 8 12 16 20 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 4-5 1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 3.3A 0 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE VOLTAGE (V) TJ = 25oC 0.4 0 ID , DRAIN CURRENT (A) 20 102 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 5 5 10 2 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 IRF720 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 10% 0 90% DUT VGS VGS 0 10% VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2F 50% PULSE WIDTH FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50k Qgd 0.3F VGS Qgs D VDS DUT G IG(REF) 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 4-6 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF720 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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