2N7002K
N-Channel MOSFET
Features
Unit
VDS Drain-source Voltage 60 V
ID Drain Current 340 mA
PD Total Power Dissipation 350 mW
TJ Operating Junction Temperature -55 to +150 к
TSTG Storage Temperature -55 to +150 к
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
GH
J
.079
2.000 in
c
h
es
mm
.
03
1
.800
.035
.900
.
03
7
.950
.037
.950
K
2
3
1
1.GATE
2. SOURCE
3. DRAIN
omponents
20736 Marilla Street Chatsworth
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MCC
Revision: C 2012/06/15
TM
Micro Commercial Components
www.mccsemi.com
1 of 7
• High density cell design for low RDS(ON)
• Voltage controlled small signal switch
• Rugged and reliable
• High saturation current capability
• Marking : 72K
Symbol Rating
Maximum Ratings @ 25OC Unless Otherwise Specified
Rating
•
ESD Protected up to 2KV (HBM)
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
B .083 .104 2.10 2.64
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Typ Max Units
V(BR)DSS Drain-Source Breakdown Voltage
(VGS=0Vdc, ID=10µAdc) 60 --- --- Vdc
VGS(th) Gate-Threshold Voltage
(VDS=VGS, ID=1mAdc)
1.0
--- --- Vdc
IGSS Gate-body Leakage
(VDS =0Vdc, VGS =f10Vdc) --- --- f200 nAdc
IDSS Zero Gate Voltage Drain Current
(VDS =48Vdc, VGS =0Vdc) --- --- 1 uAdc
rDS(on) Drain-Source On-Resistance
(VGS=4.5Vdc, ID=200mAdc)
(VGS=10Vdc, ID=500mAdc) ---
--- ---
--- 5.3
5.0 Ω
VSD Diode Forward Voltage
(VGS=0Vdc, IS=300mAdc) --- --- 1.5 Vdc
Ciss Input Capacitance --- --- 40
COSS Output Capacitance --- --- 30
CrSS Reverse Transfer
Capacitance
VDS=10Vdc,
VGS =0Vdc
f=1MHz --- --- 10 pF
Switching
td(on) Turn-on Time --- --- 10
td(off) Turn-off Time --- --- 15
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(VDS =0Vdc, VGS =f5Vdc) --- --- f100 nAdc
(dls/dt=-100A/µS)
Qr
(VGS=0V, IS=300mA,VR=25V,)
Recovered charge --- ---
30 nC
VDD=50 V, RL=250Ω,
RGS=50Ω,VGS=10 V,
RG=50Ω
VGS=0V, IS=300mA,
VR=25V,
dls/dt=-100A/µS
trr
Reverse
recovery
time
30
---
---
ns
RthJA Thermal Resistance fromJunction to Ambient 357
к/W
VGS Gate-source Voltage V
IGSS Gate-body Leakage
(VDS =0Vdc, VGS =f10Vdc) --- --- f200 nAdc
f20
2N7002KMCC
Revision: C 2012/06/15
TM
Micro Commercial Components
www.mccsemi.com
2 of 7
2N7002K
Revision: C 2012/06/15
TM
Micro Commercial Components
MCC
www.mccsemi.com
3 of 7
2N7002KMCC
Revision: C 2012/06/15
TM
Micro Commercial Components
www.mccsemi.com
4 of 7
2N7002KMCC
Revision: C 2012/06/15
TM
Micro Commercial Components
www.mccsemi.com
5 of 7
2N7002KMCC
Revision: C 2012/06/15
TM
Micro Commercial Components
www.mccsemi.com
6 of 7
MCC
Revision: C 2012/06/15
TM
Micro Commercial Components
www.mccsemi.com
7 of 7
3
Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Ordering Information :
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