TLP180
2009-01-19
1
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP180
Telephone Use Equipment
Programmable Controllers
AC / DCInput Module
Telecommunication
The TOSHIBA mini flat coupler TLP180 is a small outline coupler, suitable
for surface mount assembly.
TLP180 consist of a photo transistor, optically coupled to a gallium
arsenide infrared emitting diode connected inverse parallel, and can
operate directly by AC input current.
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750 Vrms (min)
UL recognized: UL1577, file No. E67349
BSI approved: BS EN60065:2002, certificate no.8285
BS EN60950-1:2002, certificate no.8286
Current Transfer Ratio
Current Transfer Ratio
IF = 5 mA, VCE = 5 V, Ta = 25
Classi-
fication(*1) Min Max
Marking Of
Classification
Standard 50 600
Blank, YE, GR, BL , GB
Rank Y 50 150 YE
Rank GR 100 300 GR
Rank BL 200 600 BL
Rank GB 100 600 GB
The product with the Rank Y and BL are limited in production.
For details, please contact your nearest Toshiba sales representative.
(*1): Ex. rank GB: TLP180 (GB)
(Note) Application type name for certification test,
please use standard product type name, i.e.
TLP180(GB): TLP180
TOSHIBA 114C1
Weight: 0.09 g (typ.)
Pin Configuration
(top view)
6
1: Anode, Cathode
3: Cathode, Anode
4: Emitter
6: Collector
4
1
3
Unit in mm
TLP180
2009-01-19
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF(RMS) ±50 mA
Forward current detating (Ta53°C) ΔIF / °C 0.7 mA / °C
Pulse forward current (Note 1) IFP ±1 A
LED
Junction temperature Tj 125 °C
Collectoremitter voltage VCEO 80 V
Emittercollector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derating (Ta 25°C) ΔPC / °C 1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg 55 to 125 °C
Operating temperature range Topr 55 to 100 °C
Lead soldering temperature (10 s) Tsol 260 °C
Total package power dissipation PT 200 mW
Total package power dissipation derating (Ta 25°C) ΔPT / °C 2.0 mW / °C
Isolation voltage (AC,1 min., R.H. 60%) (Note 2) BVS 3750
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width 100 μs,f=100 Hz
Note 2: Device considered a two terminal device: Pins 1 and 3 shorted together and 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC 5 48 V
Forward current IF(RMS) 16 20 mA
Collector current IC 1 10 mA
Operating temperature Topr 25
85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP180
2009-01-19
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = ±10 mA 1.0 1.15 1.3 V
LED
Capacitance CT V = 0, f = 1 MHz 60 pF
Collectoremitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 V
Emittercollector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 V
VCE = 48 V (ambient light
below 1000 x)
(Note 3)
0.01
(2)
0.1
(10) μA
Collector dark current ICEO VCE = 48 V (ambient light
Ta = 85°C below 1000 x)
(Note 3)
2
(4)
50
(50) μA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz 10 pF
Note 3: Please use standard electric lamp to light up the device's marking surface.
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
IF = ±5 mA, VCE = 5 V 50 600
Current transfer ratio IC / IF Rank GB 100 600
%
IF = ±1 mA, VCE = 0.4 V 60
Saturated CTR IC / IF (sat) Rank GB 30
%
IC = 2.4 mA, IF = ±8 mA 0.4
IC = 0.2 mA, IF = ±1 mA 0.2
Collectoremitter
saturation voltage VCE (sat)
Rank GB 0.4
V
Offstate collector current IC(off) V
F = ± 0.7 V, VCE = 48 V 1 10 μA
CTR symmetry IC (ratio) IC (IF = 5 mA) / IC (IF = 5 mA)
(Note 4) 0.33 1 3
Note 4: IC(ratio)= 5V)
CE
V,
F1
I
F
(I
C1
I
5V)
CE
V,
F2
I
F
(I
C2
I
==
==
IC1
IC2
VCE
IF1
IF2
TLP180
2009-01-19
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Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance input to output CS VS = 0 V, f = 1 MHz 0.8 pF
Isolation resistance RS VS = 500 V, R.H. 60% 5×1010 1014 Ω
AC, 1 minute 3750
AC, 1 second, in oil 10000
Vrms
Isolation voltage BVS
DC, 1 minute, in oil 10000 V
dc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr 2
Fall time tf 3
Turnon time tON 3
Turnoff time tOFF
VCC = 10 V, IC = 2 mA
RL = 100 Ω
3
μs
Turnon time tON 2
Storage time ts 25
Turnoff time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = ±16 mA
40
μs
Fig. 1: Switching time test circuit
tOFF
tON
VCE
IF
ts VCC
4.5V
0.5V
VCC
RL
IF
VCE
TLP180
2009-01-19
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PC – Ta
200
20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
Pulse width 100 μs
Ta = 25°C
103 102101 100
30
50
100
300
1000
500
ΔVF / ΔTa IF
Forward current IF (mA)
Forward voltage temperature
coefficient ΔVF / ΔTa ( mV / ° C )
3.2
0.4
0.1
2.8
2.4
2.0
1.6
1.2
0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse width 10 μs
Repetitive
Frequency = 100 Hz
Ta = 25°C
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
20
80
60
40
20
0
0 20 40 60 80 100 120
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
25°C 85°C 25
°C
TLP180
2009-01-19
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Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50
mA
30
mA
2
0
mA
1
5
mA
10
mA
PC(MAX)
IF = 5 mA
Ta = 25°C
Collector-emitter voltage VCE (V)
Forward current IF (mA)
IC / IF – IF
Current transfer ratio
I
C / IF (%)
1000
10
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10 V
VCE = 5 V
VCE = 0.4 V
Ta = 25°C
Sample B
Sample A
Collector dark current ID(ICEO) (μA)
ICEO – Ta
Ambient temperature Ta (°C)
0
101
VCE = 48V
5
V
1
0
V
24
V
20 40 60 80 100
100
10
1
10
2
10
3
10
4
IC – IF
Forward current IF (mA)
Collector current IC (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample A
Sample B
Ta = 25°C
VCE = 10 V
VCE = 5 V
VCE = 0.4 V
IC – VCE
30
0
0 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50
mA
Ta = 25°C
4
0
mA
30
mA
2
0
mA
10
mA
5
mA
2 mA
TLP180
2009-01-19
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VCE(sat) – Ta
Ambient temperature Ta (°C)
Collector-emitter saturation
voltage VCE(sat) (V)
0.24
0
40
0.20
0.12
0.08
0.04
20 0 40 80 100 20 60
0.16
IF = 5 mA, IC = 1 mA
IF = 1 mA, IC = 0.2mA
IF = 1 mA
IC = 0.2 mA
IC – Ta
Collector current IC (mA)
100
1
20 100
0 20 40 80
30
5
60
0.1
0.3
0.5
3
10
50
VCE = 5 V
1mA
0.5mA
5
mA
1
mA
IF = 25mA
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (k)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (μs)
5
3
1
Ta = 25°C
IF = 16 mA
VCC = 5 V
tOFF
ts
tON
100 10
Switching time (μs)
Switching Time Ta
0
160
20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1
100
0.3
3
5
50 tOFF
ts
tON
IF = 16 mA
VCC = 5 V
RL = 1.9 kΩ
TLP180
2009-01-19
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the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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