ISOCOM COMPONENTS LTD
Unit 25B, Park V iew Road W est,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
19/11/08
APPROVALS
zUL recognised, File No. E91231 "JJ "
'X' SPECIFICATION APPROVALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The IS4N45, IS4N46 are optically coupled
isolators consisting of an infrared light emitting
diode and a NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package. These devices are designed to
equal the 4N45, 4N46 characteristics while
providing greater voltage and current capability.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
zHigh Isolation V oltage (5.3kVRMS ,7.5kVPK )
zHigh Current Transfer Ratio ( 1500% typ.)
zHigh BVCEO ( 55V min.)
zInternal base-emitter resistor minimizes
output leakage
zLow input current 0.5mA IF
APPLICATIONS
zTelephone ring detector
zDigital logic ground isolation
zLow input current line receiver
zLogic to reed relay interface
zLevel shifting
zInterface between logic families
zLine voltage status indicator - low input
power dissipation
IS4N46
IS4N45
LOW INPUT CURRENT
DARLINGTON OUTPUT OPTICALLY
COUPLED ISOLAT OR
Dimensions in mm
1
34
6
25
0.5 0.26
0.5
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
10.46
9.86
0.6
0.1 1.25
0.75
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering T emperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse V oltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter V oltage VCEO 55V
Emitter-baseV oltage VEBO 6V
Collector Current 150mA
Power Dissipation 300mW
POWER DISSIPATION
T otal Power Dissipation 350mW
DB91024
Input Forward Voltage (VF) 1.2 1.5 V IF = 10mA
Reverse Current (IR)10μAV
R = 4V
Output Collector-emitter Breakdown (BVceo) 55 V IC = 1mA
Emitter-collector Breakdown (BV eco) 0.1 V IE = 10μA
Emitter-base Breakdown (BV ebo) 6 V IE = 10μA
Coupled DC Current Transfer Ratio ( CTR )
IS4N46 350 % 0.5mA IF , 1V VCE
IS4N46 500 % 1mA IF , 1V VCE
IS4N45 250 % 1mA IF , 1V VCE
IS4N46, IS4N45 200 % 10mA IF , 1.2V VCE
Logic Low Output Voltage ( VOL )
IS4N46 1.0 V 0.5mA IF , 1.75mA IOL
IS4N46 1.0 V 1mA IF , 5mA IOL
IS4N45 1.0 V 1mA IF , 2.5mA IOL
IS4N46, IS4N45 1.2 V 10mA IF , 20mA IOL
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Input-output Capacitance Cf 0.6 pF V = 0, f =1MHz
Output rise time, tr 1 00 3 00 μSV
CE = 2V , IC = 20mA
Output fall time, tf 2 0 1 00 μSR
L = 100Ω
19/11/08
PARAMETER MIN TYP MAX UNITS TEST CONDITION
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
DB91024
19/11/08
0 1 2 3 4 5 6
0.01
0.1
Collector-emitter voltage VCE ( V )
-30 0 25 50 75 100
Ambient temperature T A ( °C )
Normalized Output Current vs.
Collector-emitter Voltage
Collector dark current ICEO (nA)
Collector Dark Current vs.
Ambient Temperature
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
100
0
Collector power dissipation PC (mW)
Collector Power Dissipation vs. Ambient Temperature
50
0.1 1.0 10 100
Input current IF (mA)
Normalized Output Current vs.
Input Current
0.01
0.1
1.0
10
1.0
10
100
Normalized output current
IF = 1mA
10mA
50mA
1
10
100
1k
10k
100k
150
200
250
1.0
Normalized output current
Normalized Output Current vs.
Ambient Temperature
10
-50 -25 0 25 50 75 100
Ambient temperature TA ( °C )
Ambient temperature T A ( °C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current IF (mA)
70
80
Normalized to
IF = 1mA
(300μs pulse),
VCE = 5V
10mA
IF = 1mA
50mA
Normalized to
IF = 1mA
(300μs pulse),
VCE = 5V
TA = 25 °C
0.01
Normalized output current
50V
VCE
VCE = 5V
0.1
100
100
Normalized to
IF = 1mA
(300μs pulse),
VCE = 5V
TA = 25 °C
10V
VCE
DB91024
