Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 4 1Publication Order Number:
MMSZ5221ET1/D
MMSZ5221ET1 Series
Preferred Device
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
Pb−Free Packages are Available
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 s)
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Power Dissipation @ 20 s (Note 1)
@ TL 25°CPpk 225 W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TL = 75°C
Derated above 75°C
PD500
6.7 mW
mW/°C
Thermal Resistance, (Note 3)
Junction−to−Ambient RJA 340 °C/W
Thermal Resistance, (Note 3)
Junction−to−Lead RJL 150 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to
+150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 11.
2. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
3. Thermal Resistance measurement obtained via infrared Scan Method.
SOD−123
CASE 425
STYLE 1
1
Cathode 2
Anode
MARKING DIAGRAM
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
xxx = Specific Device Code
M = Date Code
xxx M
1
2
ÂÂ
ÂÂ
ÂÂ
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**The “T1” suffix refers to an 8 mm, 7 inch reel.
The “T3” suffix refers to an 8 mm, 13 inch reel.
Devices listed in
bold, italic
are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Device** Package Shipping
ORDERING INFORMATION
MMSZ52xxET1 SOD−123 3000/Tape & Reel
MMSZ52xxET3 SOD−123 10,000/Tape & Reel
MMSZ52xxET1G SOD−123
(Pb−Free) 3000/Tape & Reel
MMSZ52xxET3G SOD−123
(Pb−Free) 10,000/Tape & Reel
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 0.95 V Max. @ IF = 10 mA)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRReverse Voltage
IFForward Current
VFForward Voltage @ IFZener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Notes 4 and 5) Zener Impedance (Note 6) Leakage Current
Device
VZ (V) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
Device
Device
Marking Min Nom Max mA mA A V
MMSZ5221ET1 CA1 2.28 2.4 2.52 20 30 1200 0.25 100 1
MMSZ5223ET1 CA3 2.57 2.7 2.84 20 30 1300 0.25 75 1
MMSZ5226ET1 CA6 3.14 3.3 3.47 20 28 1600 0.25 25 1
MMSZ5228ET1 CA8 3.71 3.9 4.10 20 23 1900 0.25 10 1
MMSZ5229ET1 CA9 4.09 4.3 4.52 20 22 2000 0.25 5 1
MMSZ5231ET1 CB2 4.85 5.1 5.36 20 17 1600 0.25 5 2
MMSZ5232ET1, G CB3 5.32 5.6 5.88 20 11 1600 0.25 5 3
MMSZ5234ET1 CB5 5.89 6.2 6.51 20 7 1000 0.25 5 4
MMSZ5235ET1 CB6 6.46 6.8 7.14 20 5 750 0.25 3 5
MMSZ5236ET1, G CB7 7.13 7.5 7.88 20 6 500 0.25 3 6
MMSZ5237ET1 CB8 7.79 8.2 8.61 20 8 500 0.25 3 6.5
MMSZ5240ET1, G CC2 9.50 10 10.50 20 17 600 0.25 3 8
MMSZ5242ET1, G CC4 11.40 12 12.60 20 30 600 0.25 1 9.1
MMSZ5243ET1 CC5 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9
MMSZ5244ET1 CC6 13.30 14 14.70 9.0 15 600 0.25 0.1 10
MMSZ5245ET1 CC7 14.25 15 15.75 8.5 16 600 0.25 0.1 11
MMSZ5246ET1 CC8 15.20 16 16.80 7.8 17 600 0.25 0.1 12
MMSZ5248ET1 CD1 17.10 18 18.90 7.0 21 600 0.25 0.1 14
MMSZ5250ET1 CD3 19.00 20 21.00 6.2 25 600 0.25 0.1 15
MMSZ5252ET1 CD5 22.80 24 25.20 5.2 33 600 0.25 0.1 18
MMSZ5255ET1 CD8 26.60 28 29.40 4.5 44 600 0.25 0.1 21
MMSZ5256ET1 CD9 28.50 30 31.50 4.2 49 600 0.25 0.1 23
MMSZ5257ET1 CE1 31.35 33 34.65 3.8 58 700 0.25 0.1 25
MMSZ5263ET1 CE7 53.20 56 58.80 2.2 150 1300 0.25 0.1 43
4. The type numbers shown have a standard tolerance of ±5% on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C 1°C.
6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz.
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TYPICAL CHARACTERISTICS
VZ, NOMINAL ZENER VOLTAGE (V)
−3
−2
−1
0
1
2
3
4
5
6
7
8
12111098765432
Figure 1. Temperature Coefficients
(Temperature Range −55°C to +150°C)
TYPICAL TC VALUES
FOR MMSZ5221BT1 SERIES
VZ @ IZT
100
10
110 100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Temperature Coefficients
(Temperature Range −55°C to +150°C)
VZ @ IZT
1.2
1.0
0.8
0.6
0.4
0.2
01501251007550250 T, TEMPERATURE (°C)
Figure 3. Steady State Power Derating
PD versus TA
PD versus TL
0.1 PW, PULSE WIDTH (ms)
Figure 4. Maximum Nonrepetitive Surge Power
1 10 100 1000
1000
100
10
1
RECTANGULAR
WAVEFORM, TA = 25°C
100
VZ, NOMINAL ZENER VOLTAGE
Figure 5. Effect of Zener Voltage on
Zener Impedance
101
1000
100
10
1
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IZ = 1 mA
5 mA
20 mA
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
1.21.11.00.90.80.70.60.50.4
1000
100
10
1
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
150°C75°C 25°C 0°C
TYPICAL TC VALUES
FOR MMSZ5221BT1 SERIES
VZ, TEMPERATURE COEFFICIENT (mV/°C)
VZ, TEMPERATURE COEFFICIENT (mV/°C)
Ppk, PEAK SURGE POWER (WATTS)
ZZT, DYNAMIC IMPEDANCE ()
IF, FORWARD CURRENT (mA)
PD, POWER DISSIPATION (WATTS)
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TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 7. Typical Capacitance
1000
100
10
1101
BIAS AT
50% OF VZ NOM
TA = 25°C
0 V BIAS
1 V BIAS
12
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 1086420
TA = 25°C
VZ, ZENER VOLTAGE (V)
100
10
1
0.1
0.01 10 30 50 70 90
TA = 25°C
90
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150°C
+25°C
−55°C
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V) Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
IR, LEAKAGE CURRENT (A)
IZ, ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
100
Figure 11. 8 × 20 s Pulse Waveform
90
80
70
60
50
40
30
20
10
0020406080
t, TIME (s)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
HALF VALUE IRSM/2 @ 20 s
% OF PEAK PULSE CURRENT
PEAK VALUE IRSM @ 8 s
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PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
ÂÂÂ
ÂÂÂ
B
D
K
AC
E
J
1
2
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.055 0.071 1.40 1.80
B0.100 0.112 2.55 2.85
C0.037 0.053 0.95 1.35
D0.020 0.028 0.50 0.70
E0.01 −−− 0.25 −−−
H0.000 0.004 0.00 0.10
J−−− 0.006 −−− 0.15
K0.140 0.152 3.55 3.85
1.22
0.048
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
mm
inches
SCALE 10:1
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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6
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MMSZ5221ET1/D
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