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LMH6609

LMH6609 900MHz Voltage Feedback Op Amp

Literature Number: SNOSA84E

LMH6609

January 4, 2011

900MHz Voltage Feedback Op Amp

General Description

The LMH6609 is an ultra wideband, unity gain stable, low

power, voltage feedback op amp that offers 900MHz band-

width at a gain of 1, 1400V/μs slew rate and 90mA of linear

output current.

The LMH6609 is designed with voltage feedback architecture

for maximum flexibility especially for active filters and inte-

grators. The LMH6609 has balanced, symmetrical inputs with

well-matched bias currents and minimal offset voltage.

With Differential Gain of 0.01% and Differential Phase of

0.026° the LMH6609 is suited for video applications. The 90-

mA of linear output current makes the LMH6609 suitable for

multiple video loads and cable driving applications as well.

The supply voltage is specified at 6.6V and 10V. A low supply

current of 7mA (at 10V supply) makes the LMH6609 useful in

a wide variety of platforms, including portable or remote

equipment that must run from battery power.

The LMH6609 is available in the industry standard 8-pin SOIC

package and in the space-saving 5-pin SOT package. The

LMH6609 is specified for operation over the -40°C to +85°C

temperature range. The LMH6609 is manufactured in Nation-

al Semiconductor's state-of-the-art VIP10™ technology for

high performance.

Features

■900MHz −3dB bandwidth (AV = 1)

■Large signal bandwidth and slew rate 100% tested

■280MHz −3dB bandwidth (AV = +2, VOUT = 2VPP)

■90mA linear output current

■1400V/μs slew rate

■Unity gain stable

■<1mV input Offset voltage

■7mA Supply current (no load)

■6.6V to 12V supply voltage range

■0.01%/0.026° differential gain/phase PAL

■3.1nV/ voltage noise

■Improved replacement for CLC440, 420, 426

Applications

■Test equipment

■IF/RF amplifier

■A/D Input driver

■Active filter

■Integrator

■DAC output buffer

■Transimpedance amplifier

Typical Application

20079037

20079038

Sallen Key Low Pass Filter with Equal C Values

VIP10™ is a trademark of National Semiconductor Corporation.

LMH6609 900MHz Voltage Feedback Op Amp

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

VS (V+ - V−)±6.6V

IOUT (Note 3)

Common Mode Input Voltage V+ to V−

Maximum Junction Temperature +150°C

Storage Temperature Range −65°C to +150°C

Lead Temperature Range +300°C

ESD Tolerance (Note 4)

Human Body Model 2000V

Machine Model 200V

Operating Ratings (Note 3)

Thermal Resistance

Package (θJC) (θJA)

8-Pin SOIC 65°C/W 145°C/W

5-Pin SOT23 120°C/W 187°C/W

Operating Temperature −40°C +85°C

Nominal Supply Voltage (Note

±3.3V ±6V

±5V Electrical Characteristics

Unless specified, AV = +2, RF = 250Ω: VS = ±5V, RL = 100Ω; unless otherwise specified. Boldface limits apply over temperature

Range. (Note 2)

Symbol Parameter Conditions Min Typ Max Units

Frequency Domain Response

SSBW −3dB Bandwidth VOUT = 0.5VPP 260 MHz

LSBW −3dB Bandwidth VOUT = 4.0VPP 150 170 MHz

SSBWG1 −3dB Bandwidth AV = 1 VOUT = 0.25VPP 900 MHz

GFP .1dB Bandwidth Gain is Flat to .1dB 130 MHz

DG Differential Gain RL = 150Ω, 4.43MHz 0.01 %

DP Differential Phase RL = 150Ω, 4.43MHz 0.026 deg

Time Domain Response

TRS Rise and Fall Time 1V Step 1.6 ns

TRL 4V Step 2.6 ns

tsSettling Time to 0.05% 2V Step 15 ns

SR Slew Rate 4V Step (Note 5) 1200 1400 V/µs

Distortion and Noise Response

HD2 2nd Harmonic Distortion 2VPP, 20MHz −63 dBc

HD3 3rd Harmonic Distortion 2VPP, 20MHz −57 dBc

Equivalent Input Noise

VN Voltage Noise >1MHz 3.1 nV/

CN Current Noise >1MHz 1.6 pA/

Static, DC Performance

VIO Input Offset Voltage ±0.8 ±2.5

±3.5

Input Voltage Temperature Drift 4 μV/°C

IBN Input Bias Current −2 ±5

±8

µA

Bias Current Temperature Drift 11 nA/°C

IBI Input Offset Current .1 ±1.5

±3

µA

PSRR Power Supply Rejection Ratio DC, 1V Step 67

73 dB

CMRR Common Mode Rejection Ratio DC, 2V Step 67

73 dB

ICC Supply Current RL = ∞ 7.0 7.8

8.5

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LMH6609

Symbol Parameter Conditions Min Typ Max Units

Miscellaneous Performance

RIN Input Resistance 1 MΩ

CIN Input Capacitance 1.2 pF

ROUT Output Resistance Closed Loop 0.3 Ω

VOOutput Voltage Range RL = ∞±3.6

±3.3

±3.9 V

VOL RL = 100Ω ±3.2

±3.0

±3.5 V

CMIR Input Voltage Range Common Mode, CMRR > 60dB ±2.8

±2.5

±3.0 V

IOLinear Output Current VOUT ±60

±50

±90 mA

±3.3V Electrical Characteristics

Unless specified, AV = +2, RF = 250Ω: VS = ±3.3V, RL = 100Ω; unless otherwise specified. Boldface limits apply over temperature

Range. (Note 2)

Symbol Parameter Conditions Min Typ Max Units

Frequency Domain Response

SSBW −3dB Bandwidth VOUT = 0.5VPP 180 MHz

LSBW −3dB Bandwidth VOUT = 3.0VPP 110 MHz

SSBWG1 −3dB Bandwidth AV = 1 VOUT = 0.25VPP 450 MHz

GFP .1dB Bandwidth VOUT = 1VPP 40 MHz

DG Differential Gain RL = 150Ω, 4.43MHz .01 %

DP Differential Phase RL = 150Ω, 4.43MHz .06 deg

Time Domain Response

TRL 1V Step 2.2 ns

SR Slew Rate 2V Step (Note 5) 800 V/µs

Distortion and Noise Response

HD2 2nd Harmonic Distortion 2VPP, 20MHz −63 dBc

HD3 3rd Harmonic Distortion 2VPP, 20MHz −43 dBc

Equivalent Input Noise

VN Voltage Noise >1MHz 3.7 nV/

CN Current Noise >1MHz 1.1 pA/

Static, DC Performance

VIO Input Offset Voltage 0.8 ±2.5

±3.5

IBN Input Bias Current −1 ±3

±6

µA

IBI Input Offset Current 0 ±1.5

±3

µA

PSRR Power Supply Rejection Ratio DC, .5V Step 67 73 dB

CMRR Common Mode Rejection Ratio DC, 1V Step 67 75 dB

ICC Supply Current RL = ∞ 3.6 5

Miscellaneous Performance

ROUT Input Resistance Close Loop .05 Ω

VOOutput Voltage Range RL = ∞±2.1 ±2.3 V

VOL RL = 100Ω ±1.9 ±2.0 V

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LMH6609

Symbol Parameter Conditions Min Typ Max Units

CMIR Input Voltage Range Common Mode ±1.3 V

IOLinear Output Current VOUT ±30 ±45 mA

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is

intended to be functional, but specific performance is not guaranteed. For guaranteed specifications, see the Electrical Characteristics tables.

Note 2: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating

of the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self heating where TJ >

TA. See Applications Section for information on temperature derating of this device. Min/Max ratings are based on product characterization and simulation.

Individual parameters are tested as noted.

Note 3: The maximum output current (IOUT) is determined by device power dissipation limitations. See the Power Dissipation section of the Application Section

for more details.

Note 4: Human body model, 1.5kΩ in series with 100pF. Machine model, 0Ω In series with 200pF.

Note 5: rate is Average of Rising and Falling 40-60% slew rates.

Note 6: Nominal Supply voltage range is for supplies with regulation of 10% or better.

Connection Diagrams

5-Pin SOT23

20079039

Top View

8-Pin SOIC

20079040

Top View

Ordering Information

Package Part Number Package Marking Transport Media NSC Drawing

8-Pin SOIC LMH6609MA LMH6609MA 95 Units/Rails M08A

LMH6609MAX 2.5k Units Tape and Reel

5-SOT23 LMH6609MF A89A 1k Units Tape and Reel MF05A

LMH6609MFX 2.5k Units Tape and Reel

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LMH6609

Typical Performance Characteristics

Small Signal Non-Inverting Frequency Response

20079004

Large Signal Non-Inverting Frequency Response

20079003

Small Signal Inverting Frequency Response

20079002

Large Signal Inverting Frequency Response

20079010

Frequency Response vs. VOUT AV = 2

20079009

Frequency Response vs. VOUT AV = 2

20079001

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LMH6609

Frequency Response vs. VOUT AV = 1

20079007

Frequency Response vs. VOUT AV = −1

20079008

Frequency Response vs. VOUT AV = −1

20079006

Frequency Response vs. Cap Load

20079042

Frequency Response vs. Cap Load

20079043

Suggested ROUT vs. Cap Load

20079041

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LMH6609

CMRR vs. Frequency

20079011

PSRR vs. Frequency

20079012

PSRR vs. Frequency

20079013

Pulse Response

20079016

Pulse Response

20079014

Large Signal Pulse Response

20079015

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LMH6609

Noise vs. Frequency

20079025

HD2 vs. VOUT

20079018

HD3 vs. VOUT

20079017

HD2 vs. VOUT

20079020

HD3 vs. VOUT

20079019

HD2 & HD3 vs. Frequency

20079021

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LMH6609

HD2 & HD3 vs. Frequency

20079022

Differential Gain & Phase

20079046

Differential Gain & Phase

20079047

Open Loop Gain & Phase

20079044

Open Loop Gain & Phase

20079045

Closed Loop Output Resistance

20079023

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LMH6609

Application Section

GENERAL DESIGN EQUATION

The LMH6609 is a unity gain stable voltage feedback ampli-

fier. The matched input bias currents track well over temper-

ature. This allows the DC offset to be minimized by matching

the impedance seen by both inputs.

GAIN

The non-inverting and inverting gain equations for the

LMH6609 are as follows:

20079027

FIGURE 1. Typical Non-Inverting Application

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LMH6609

20079028

FIGURE 2. Typical Inverting Application

20079029

FIGURE 3. Single Supply Inverting

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LMH6609

20079030

FIGURE 4. AC Coupled Non-Inverting

GAIN BANDWIDTH PRODUCT

The LMH6609 is a voltage feedback amplifier, whose closed-

loop bandwidth is approximately equal to the gain-bandwidth

product (GBP) divided by the gain (AV). For gains greater than

5, AV sets the closed-loop bandwidth of the LMH6609.

20079031

For Gains less than 5, refer to the frequency response plots

to determine maximum bandwidth. For large signal bandwidth

the slew rate is a more accurate predictor of bandwidth.

20079032

Where fMAX = bandwidth, SR = Slew rate and VP = peak am-

plitude.

OUTPUT DRIVE AND SETTLING TIME PERFORMANCE

The LMH6609 has large output current capability. The 100mA

of output current makes the LMH6609 an excellent choice for

applications such as:

•Video Line Drivers

•Distribution Amplifiers

When driving a capacitive load or coaxial cable, include a se-

ries resistance ROUT to back match or improve settling time.

Refer to the Driving Capacitive Loads section for guidance on

selecting an output resistor for driving capacitive loads.

EVALUATION BOARDS

National Semiconductor offers the following evaluation

boards as a guide for high frequency layout and as an aid in

device testing and characterization. Many of the datasheet

plots were measured with these boards.

Device Package Board Part #

LMH6609MA SOIC LMH730227

LMH6609MF SOT-23 LMH730216

See the LMH6609 Product Folder on www.national.com for

evaluation board availability and ordering information.

CIRCUIT LAYOUT CONSIDERATION

A proper printed circuit layout is essential for achieving high

frequency performance. National provides evaluation boards

for the LMH6609 as shown above. These boards were laid

out for optimum, high-speed performance. The ground plane

was removed near the input and output pins to reduce para-

sitic capacitance. Also, all trace lengths were minimized to

reduce series inductances.

Supply bypassing is required for the amplifiers performance.

The bypass capacitors provide a low impedance return cur-

rent path at the supply pins. They also provide high frequency

filtering on the power supply traces. 10μF tantalum and .

01μF capacitors are recommended on both supplies (from

supply to ground). In addition a .1μF ceramic capacitor can

be added from V+ to V− to aid in second harmonic suppres-

sion.

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LMH6609

20079033

FIGURE 5. Driving Capacitive Loads with ROUT for

Improved Stability

DRIVING CAPACITIVE LOADS

Capacitive output loading applications will benefit from the

use of a series output resistor ROUT. Figure 5 shows the use

of a series output resistor, ROUT as it might be applied when

driving an analog to digital converter. The charts "Suggested

RO vs. Cap Load" in the Typical Performance Section give a

recommended value for mitigating capacitive loads. The val-

ues suggested in the charts are selected for .5dB or less of

peaking in the frequency response. This gives a good com-

promise between settling time and bandwidth. For applica-

tions where maximum frequency response is needed and

some peaking is tolerable, the value of RO can be reduced

slightly from the recommended values. There will be ampli-

tude lost in the series resistor unless the gain is adjusted to

compensate; this effect is most noticeable with heavy resis-

tive loads.

COMPONENT SELECTION AND FEEDBACK RESISTOR

Surface mount components are highly recommended for the

LMH6609. Leaded components will introduce unpredictable

parasitic loading that will interfere with proper device opera-

tion. Do not use wire wound resistors.

The LMH6609 operates best with a feedback resistor of ap-

proximately 250Ω for all gains of +2 and greater and for −1

and less. With lower gains in particular, large value feedback

resistors will exaggerate the effects of parasitic capacitances

and may lead to ringing on the pulse response and frequency

response peaking. Large value resistors also add undesirable

thermal noise. Feedback resistors that are much below

100Ω will load the output stage, which will reduce voltage

output swing, increase device power dissipation, increase

distortion and reduce current available for driving the load.

In the buffer configuration the output should be shorted di-

rectly to the inverting input. This feedback does not load the

output stage because the inverting input is a high impedance

point and there is no gain set resistor to ground.

OPTIMIZING DC ACCURACY

The LMH6609 offers excellent DC accuracy. The well-

matched inputs of this amplifier allows even better perfor-

mance if care is taken to balance the impedances seen by the

two inputs. The parallel combination of the gain setting RG

and feedback RF resistors should be equal to RSEQ, the re-

sistance of the source driving the op amp in parallel with any

terminating Resistor (See Figure 1). Combining this with the

non inverting gain equation gives the following parameters:

RF = AVRSEQ

RG = RF/(AV−1)

For Inverting gains the bias current cancellation is accom-

plished by placing a resistor RB on the non-inverting input

equal in value to the resistance seen by the inverting input

(See Figure 2). RB = RF || (RG + RS)

The additional noise contribution of RB can be minimized by

the use of a shunt capacitor (not shown).

POWER DISSIPATION

The LMH6609 has the ability to drive large currents into low

impedance loads. Some combinations of ambient tempera-

ture and device loading could result in device overheating. For

most conditions peak power values are not as important as

RMS powers. To determine the maximum allowable power

dissipation for the LMH6609 use the following formula:

PMAX = (150º - TAMB)/θJA

Where TAMB = Ambient temperature (°C) and θJA = Thermal

resistance, from junction to ambient, for a given package (°C/

W). For the SOIC package θJA is 148°C/W, for the SOT it is

250°C/W. 150ºC is the absolute maximum limit for the internal

temperature of the device.

Either forced air cooling or a heat sink can greatly increase

the power handling capability for the LMH6609.

VIDEO PERFORMANCE

The LMH6609 has been designed to provide good perfor-

mance with both PAL and NTSC composite video signals.

The LMH6609 is specified for PAL signals. NTSC perfor-

mance is typically marginally better due to the lower frequen-

cy content of the signal. Performance degrades as the loading

is increased, therefore best performance will be obtained with

back-terminated loads. The back termination reduces reflec-

tions from the transmission line and effectively masks trans-

mission line and other parasitic capacitances from the

amplifier output stage. This means that the device should be

configured for a gain of 2 in order to have a net gain of 1 after

the terminating resistor. (See Figure 6)

20079034

FIGURE 6. Typical Video Application

ESD PROTECTION

The LMH6609 is protected against electrostatic discharge

(ESD) on all pins. The LMH6609 will survive 2000V Human

Body model or 200V Machine model events.

Under closed loop operation the ESD diodes have no effect

on circuit performance. There are occasions, however, when

the ESD diodes may be evident. For instance, if the amplifier

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LMH6609

is powered down and a large input signal is applied the ESD

diodes will conduct.

TRANSIMPEDANCE AMPLIFIER

The low input current noise and unity gain stability of the

LMH6609 make it an excellent choice for transimpedance ap-

plications. Figure 7 illustrates a low noise transimpedance

amplifier that is commonly implemented with photo diodes.

RF sets the transimpedance gain. The photo diode current

multiplied by RF determines the output voltage.

20079035

FIGURE 7. Transimpedance Amplifier

The capacitances are defined as:

•CD = Equivalent Diode Capacitance

•CF = Feedback Capacitance

The feedback capacitor is used to give optimum flatness and

stability. As a starting point the feedback capacitance should

be chosen as ½ of the Diode capacitance. Lower feedback

capacitors will peak frequency response.

Rectifier

The large bandwidth of the LMH6609 allows for high-speed

rectification. A common rectifier topology is shown in Figure

8. R1 and R2 set the gain of the rectifier.

20079036

FIGURE 8. Rectifier Topology

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LMH6609

Physical Dimensions inches (millimeters) unless otherwise noted

8-Pin SOIC

NS Product Number M08A

5-Pin SOT23

NS Product Number MF05A

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LMH6609

Notes

LMH6609 900MHz Voltage Feedback Op Amp

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