MOSPOWER Selector Guide *200C Rating MOSPOWER Selector Guide = Sse" N-Channel MOSPOWER Breakdown Ip Power Device Voltage (Bolon Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 500 0.4 13.0 150 IRF450 500 0.5 12.0 150 IRF452 500 0.85 8.0 125 IRF440 500 1.10 7.0 125 IRF442 500 1.5 6.5 175 VNPO002A* 500 1.5 45 100 VN5001A 500 1.5 45 75 IRF430 500 2.0 4.0 100 VN5002A 500 2.0 4.0 75 IRF432 500 3.0 2.5 40 {RF420 500 4.0 2.0 40 IRF422 450 0.4 13.0 150 IRF461 450 0.5 12.0 150 IRF453 450 0.85 8.0 125 IRF441 450 1.10 7.0 125 IRF443 450 1.5 6.5 175 VNNOO2A* 450 1.5 45 100 VN4501A 450 1.5 45 75 IRF431 450 2.0 40 100 VN4502A 450 2.0 4.0 75 IRF433 450 3.0 2.5 40 IRF421 450 4.0 2.0 40 IRF423 400 0.3 15.0 150 IRF350 400 0.4 13.0 150 IRF352 400 0.55 10.0 125 (RF340 400 0.80 8.0 125 IRF342 400 1.0 8.0 175 VNMO01A* 400 1.0 6.0 125 VN4000A 400 1.0 5.5 76 IRF330 400 1.5 5.0 125 VN4001A 400 1.5 45 75 IRF332 e 400 1.8 3.0 40 IRF320 400 2.5 2.5 40 IRF322 eS 350 0.3 15.0 150 IRF351 350 0.4 13.0 150 IRF353 350 0.55 10.0 125 (RF341 TO-3 350 0.80 8.0 125 IRF343 350 1.0 8.0 175 VNLOO01A* 350 1.0 6.0 125 VN3500A 350 1.0 5.5 75 IRF331 350 1.5 5.0 125 VN3501A 350 1.5 45 75 IRF333 350 1.8 3.0 40 IRF321 350 2.5 2.5 40 IRF323 200 0.085 30.0 150 IRF250 200 0.12 25.0 150 IRF252 200 0.18 18.0 125 IRF240 200 0.22 16.0 125 IRF242 200 0.4 9.0 75 {RF230 200 0.6 8.0 75 IRF232 200 0.8 5.0 40 IRF220 200 1.2 4.0 40 IRF222 150 0.085 30.0 150 IRF251 150 0.12 25.0 150 IRF253 150 0.18 18.0 125 IRF241 150 0.22 16.0 125 IRF243 150 0.4 9.0 75 IRF231 150 0.6 8.0 75 IRF233 150 0.8 5.0 40 IRF221 150 1.2 4.0 40 IRF223 120 0.18 14.0 75 VN1200A 120 0.25 12.0 100 VN1201A 1-4 SiliconixIRF320 = IRF324 = IRF322 = IRF323 IRF720 = IRF724 = IRF722 IRF723 IRF320 = IRF324 = IRF322 = IRF323 a IRF720 = IRF724 = IRF722 = IRF723 Siliconix 400Vmosrower Advanced information These power FETs are designed especially for off-line switching regulators, converters, solenoid and relay drivers. FEATURES a High Voltage a No Second Breakdown a High input Impedance a Internal Drain-Source Diode a Very Rugged: Excellent SOA = Extremely Fast Switching BENEFITS Reduced Component Count a Improved Performance a Simpler Designs = Improved Reliability Product Summary Part Number BVoss Rosion) lp Package IRF320 400V 1.80 3A IRF321 350V - TO-3 IRF322 400V 2.5Q 2.5A IRF323 350V IRF720 400V IRF721 350V 180 3A TO-220AB IRF722 400V 2.52 2.5A IRF723 350V wl ABSOLUTE MAXIMUM RATINGS (Tc = 25C unless otherwise noted) Drain-Source Voltage IRF320, 322, 720, 722.0... cece e eee e ee ee eenee IRF321, 323, 721, 723 2... c cece cence er eneeees Drain-Gate Voltage IRF320, 322, 720, 722 00... cece cece cece ne nee eee (RF321, 323, 721, 723 oo cece cece e een e eee reee Drain Current Continuous ~ IRF320, 321, 720,721... cee eee Drain Current Pulsed (80us to 300us, 1% duty cycle).............0..0.. +12A Gate Current (Peak) ............ ccc cece cece nec eee tenors t1A Gate-Source Voltage 2.0... cc cess cere cece eesen sete ere eeenee +40V Total Power Dissipation 2.2.0... 0... ccc cece eens 40W Linear Derating Factor ...........0 cc ccc ccceeee eters 0.32 W/C Operating and Storage IRF322, 323, 722,723 2... eee tees Temperature ........6. 0 ccc cece cence er neee -55C to + 150C 0.450 (11.43) 290 0.875 = om 95, He 0.250 , (7,39) 080 (2.04) eum (22.225) in| (6.35) O55 (7,59) 15.85) Te 533) 0.135 wax MAX (6.85) (3.429) c 1 t T 0.043 /1.092/ j ao SEATING o038 70.965) Mine Boo 112.70) PLANE 8 a7 1.197 (30,408) 7 pia 2183 (4.08 Ps a55 Foo ROR) 0.939 (3.54) 0.675 (17.145) VAT? (28.896) a5 T6686 716.637) . tt 14.775) MAX I oe ag ~ BOTH ENDS 070 (EM) 22.69) | 0.40 (77.176) ee B00 (19.66) 0.420 70.668) & Vy tT 1 \ / T4 SP 0.161 /4.089) 1 250] 045 (1.18) 0.228 (5.715) \ ose (3.835) SA . . . 2 R MAX BO (14.23) 9.208 16.207) portom view (73-335) [~ 386 1651) I PIN 1 Gate TO-3 PIN 1 Gate TO-220AB PIN 2 Source CASE Drain PIN 2 & TAB Drain PIN 3 Source 2-18 SiliconixELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Part Parameter Number Min Typ. | Max Unit Test Conditions Static IRF320, 322 400 Drain-Source Breakdown IRF720, 722 BY, = Vas = 0, Ip = 250 P85 Voltage IRF321,923 | aa v__ | Yas=6. !o=250HA IRF721, 723 Vestn Gate Threshold Voitage All 2.0 40 Vv Vos = Ves, 'p = 1.0 mA | less Gate-Body Leakage Alt +100 nA Vas = + 20V, Vos =9 ; Zero Gate Voltage Drain All 0.1 | 025 | a Vos= Rated VpgVas=O SS Gurrent 02 | 10 Vig = Rated Vog Vag = 0, Te = 125C Ipjon) ~~: On-Statte Drain Current All 3.0 A Vos = 25V, Vag = 10V (Note 1) IRF320, 321 as | te Static Drain-Source On-State IRF720, 721 : : = =1, Toston) Resistance IRFa22, 323 2 Ves = 10V, Ip = 1.5A (Note 1) IRF722, 723 18 | 25 Dynamic Os Forward Transconductance All 1.0 2.0 $s Vog= 25V,15=1.5A (Note 1) Ciss Input Capacitance 450 600 Coss Output Capacitance All 100 200 pF Veg = 0, Vos = 25V, f= 1 MHz Cisse Reverse Transfer Capacitance 20 40 tajon) =: Turn-On Delay Time All 20 40 t, Rise Time All 25 50 Vop = 200V, [p= 1.5A, R, = 1302, ns tyoiy) Turn-Otf Delay Time All so | 100 Rg = 252, (Fig. 1) ty Fail Time oe AN 25 50 Drain-Source Diode Characteristics Vsp Forward On Voltage All -1.3 v lg =-3A Veg = 0 (Note 1) tr Reverse Recovery Time All 400 ns lp =-3A, Ves = 0, di/dt = 100A/us (Fig. 1) Note 1: Pulse test 80 xs to 300 us, 1% duty cycle FIGURE 1 Switching Test Circuit FIGURE 2 JEDEC Reverse Recovery Circuit $A\\A 50Q di/dt Adjust (1-27 uH) | + 5 TO S0uF 7 | 1N4993 A # lpkyAdiust , Rgen 6 | ~ Lud | }le Ro ses | 2400 iN4001 20v 2 + | 1 | , | | 4000uUF Sex 3 +>} { { - | | | circuit = | R $0252 PULSE UNDER L$ 0.0%H [generaTon| [TEST 4 PW. = 1 ys Cg < 50 pF 14 + ig WV DUTY CYCLE = 1% 14723 low UA SCOPE FROM TRIGGER CKT "7 Siliconix cZidl = CcZddl = boZddl = OZ cedal = ZeCsal = boda = OEIal