1.6 GHz SATCOM APPLICATIONS
RF & MICROWAVE TRANSISTORS
.230 2LFL (M151)
hermetically sealed
.1.65 GHz
.28 VOLTS
.GOLD METALLIZED SYSTEM
.POLYSILICON SITE BALLASTING
.OVERLAY DIE GEOMETRY
.HIGH RELIABILITY AND RUGGEDNESS
.POUT =5.0 W MIN. WITH 14.0 dB GAIN
DESCRIPTION
The SD1891-03 is a 28 V silicon NPN transistor
designed for INMARSAT and other 1.6 GHz SAT-
COM applications. This device utilizes polysilicon
site ballasting with a gold metallized die to achieve
high reliability and ruggedness.
PIN CONNECTION
BRANDING
1891-03
ORDER CODE
SD1891-03
ABSOLUTE MAXIMUM RATINGS (Tcase =25°C)
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 45 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 3.5 V
ICDevice Current 1.1 A
PDISS Power Dissipation 8.8 W
TJJunction Temperature +200 °C
TSTG Storage Temperature −65 to +200 °C
RTH(j-c) Junction-Case Thermal Resistance 20.0 °C/W
SD1891-03
1. Collector 3. Base
2. Emitter
THERMAL DATA
March 1993 1/5
ELECTRICAL SPECIFICATIONS (Tcase =25°C)
Symbol Test Conditions Value Unit
Min. Typ. Max.
POUT f=1.65 GHz PIN =200 mW VCE =28 V 5.0 — — W
GPf=1.65 GHz PIN =200 mW VCE =28 V 14 — — dB
ηcf=1.65 GHz PIN =200 mW VCE =28 V 45 — — %
COB f=1 MHz VCB =28 V — 2.5 — pF
STATIC
Symbol Test Conditions Value Unit
Min. Typ. Max.
BVCBO IC=1mA IE=0mA 45 — — V
BVEBO IE=1mA IC=0mA 3.5 — — V
ICBO VCB =24V IE=0mA — — 0.5 mA
hFE VCE =5V IC=100mA 15 — 150 —
DYNAMIC
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
SD1891-03
2/5
ZCL
ZIN
1.5 GHz
1.5 GHz
1.7 GHz
1.7 GHz
IMPEDANCE DATA
FREQ. ZIN (Ω)Z
CL (Ω)
1.5 GHz 6.5 + j 8.5 8.5 + j 18.5
1.6 GHz 6.0 + j 9.5 6.5 + j 18.0
1.7 GHz 6.5 + j 11.5 5.5 + j 15.0
SD1891-03
3/5
TEST CIRCUIT
C1, C2 : .4 - 2.5pF Johandson Capacitor #27283
C3 : 100pF ATC Chip Capacitor ATC100 A101KCA 150
C4 : 15,000pF EMI Filter Murata/Erie 9900-381-6004
L1, L2 : 4 Turns, Choke #28 AWG .080” I.D.
S1 : Epsilam 10 Er =10.2, Height .050” 1 Oz. Cu. SMA Launcher CD1
(2 pieces) .230” Fixture Housing Heatsink
SD1891-03
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0151
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information nor for any infringementofpatents or other rights of third partieswhich may results from its use. No
license is granted by implication or otherwiseunderany patent or patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France- Germany - HongKong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
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SD1891-03
5/5
