ZHB6718TA - DIODES Incorporated

SM-8 BIPOLAR TRANSISTOR H-BRIDGE

PRELIMINARY DATA SHEET ISSUE B - JULY 1997

FEATURES

* Compact package

* Low on state losses

* Low drive requirements

* Operates up to 20V supply

* 2.5 Amp continuous rating

PARTMARKING DETAIL  ZHB6718

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL NPNs PNPs UNIT

Collector-Base Voltage VCBO 20 -20 V

Collector-Emitter Voltage VCEO 20 -20 V

Emitter-Base Voltage VEBO 5-5 V

Peak Pulse Current ICM 6-6 A

Continuous Collector Current IC2.5 -2.5 A

Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

SCHEMATIC DIAGRAM

ZHB6718

1234

8765

C1,C2

E1,E4

C3,C4

E2,E3

SM-8

(8 LEAD SOT223)

Q2 Q3

Q4Q1

E2, E3

E1, E4

C1, C2

C3, C4

CONNECTION DIAGRAM

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at Tamb

= 25°C*

Any single transistor on

Q1 and Q3 on or Q2 and Q4 on equally

Ptot 1.25

Derate above 25°C*

Any single transistor on

Q1 and Q3 on or Q2 and Q4 on equally

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single transistor on

Q1 and Q3 on or Q2 and Q4 on equally

Rth(j-amb) 100

62.5

°C/ W

ZHB6718

100us

Pulse Width

Transient Thermal Resistance

D=1

D=0.2

D=0.1

D=0.05

D=0.5

Single Pulse

D=t1

1ms 10ms 100ms 1s 10s 100s

100

Single Pulse

Transient Thermal Resistance

Pulse Width

1ms100us

10ms

D=t1

1s100ms

D=0.2

D=0.05

D=0.1

10s

D=0.5

D=1

100s

T - Temperature (°C)

0.5

020

1.5

1.0

2.0

Derating curve

40 60 80 100 140120 160

Single Transistor "On" Q1 and Q3 or Q2 and Q4 "On"

Pd v PCB Area Comparison

0.1

Pcb Area (inches squared)

110

Single device on

Two devices on 

Minimum Copper

Full Copper

Two devices on 

Single device on

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB

with copper equal to 2 inches square.

 Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs

turned on.

NPN TRANSISTORS

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO 20 100 V IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO 20 27 V IC=10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO 5 8.3 V IE=100µA

Collector Cut-Off Current ICBO 100 nA VCB=16V

Emitter Cut-Off Current IEBO 100 nA VEB=4V

Collector Emitter Cut-Off

Current

ICES 100 nA VCES=16V

Collector-Emitter

Saturation Voltage

VCE(sat) 8

130

150

200

IC=0.1A, IB=10mA*

IC=1A, IB=10mA*

IC=2.5A, IB=50mA*

Base-Emitter

Saturation Voltage

VBE(sat) 0.89 1.0 V IC=2.5A, IB=50mA*

Base-Emitter Turn-On

Voltage

VBE(on) 0.79 V IC=2.5A, VCE=2V*

Static Forward Current

Transfer

Ratio

hFE 200

300

200

400

450

360

180

IC=10mA, VCE=2V*

IC=100mA, VCE=2V*

IC=2A, VCE=2V*

IC=6A, VCE=2V*

Transition

Frequency

fT100 140 MHz IC=50mA, VCE=10V

f=100MHz

Output Capacitance Cobo 23 30 pF VCB=10V, f=1MHz

Turn-On Time t(on) 170 ns VCC=10V, IC=1A

IB1=-IB2=10mA

Turn-Off Time t(off) 400 ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

ZHB6718

PNP TRANSISTORS

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C ).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -20 -65 V IC=-100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO -20 -55 V IC=-10mA*

Emitter-Base Breakdown

Voltage

V(BR)EBO -5 -8.8 V IE=-100µA

Collector Cut-Off Current ICBO -100 nA VCB=-15V

Emitter Cut-Off Current IEBO -100 nA VEB=-4V

Collector Emitter Cut-Off

Current

ICES -100 nA VCES=-15V

Collector-Emitter

Saturation Voltage

VCE(sat) -16

-130

-190

-40

-200

-260

IC=-100mA, IB=-10mA*

IC=-1A, IB=-20mA*

IC=-2.5A, IB=-200mA*

Base-Emitter

Saturation Voltage

VBE(sat) -0.98 -1.1 V IC=-2.5A, IB=-200mA*

Base-Emitter Turn-On

Voltage

VBE(on) 0.85 V I

=-2.5A, VCE=-2V*

Static Forward Current

Transfer

Ratio

hFE 300

300

150

475

450

230

IC=-10mA, VCE=-2V*

IC=-100mA, VCE=-2V*

IC=-2A, VCE=-2V*

IC=-4A, VCE=-2V*

IC=-6A, VCE=-2V*

Transition

Frequency

fT150 180 MHz IC=-50mA, VCE=-10V

f=100MHz

Output Capacitance Cobo 21 30 pF VCB=-10V, f=1MHz

Turn-On Time t(on) 40 ns VCC=-10V, IC=-1A

IB1=IB2=-20mA

Turn-Off Time t(off) 670 ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%.

ZHB6718

NPN TRANSISTOR

TYPICAL CHARACTERISTICS

ZHB6718

-55°C

100°C

25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Collector Current

=50

Collector Current

25°C

100°C

-55°C

0.0

0.4

0.1

0.2

0.3

25°C

100°C

-55°C

=50

0.0

0.2

0.4

0.6

0.8

1.0

1.2

=2V

450

225

25°C

100°C

-55°C

=2V

0.2

0.0

1.0

0.8

0.6

0.4

10A1mA

10A

10A1mA

100m

10m

1m 10m 100m 1 10

IC- Collector Current (A)

VCE(sat) v IC

=10

=50

=100

+25 °C

VCE(sat) vs IC

VBE(sat) vs IC

hFE vs IC

VBE(on) vs IC

1mA 10mA 100mA 1A

10mA 100mA 1A

PNP TRANSISTOR

TYPICAL CHARACTERISTICS

ZHB6718

-55°C

100°C

25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Collector Current

=10

Collector Current

25°C

100°C

-55°C

25°C

100°C

-55°C

=30

0.0

0.2

0.4

0.6

0.8

1.0

1.2

=2V

450

225

25°C

100°C

-55°C

=2V

0.2

0.0

1.0

0.8

0.6

0.4

10A1mA

10A 1mA

1.2

1.4

0.6

0.5

0.40.4

0.3

0.2

0.1

0.0

1.4

100m

10m

1m 10m 100m 1 10

IC- Collector Current (A)

VCE(sat) v IC

=10

=30

=50

+25°C

10mA

100mA 1A

VCE(sat) vs IC

VBE(sat) vs IC

10mA

100mA 1A

10mA 100mA 1A

hFE vs IC

VBE(on) vs IC

10mA 100mA 1A

ZHB6718

SAFE OPERATING AREA

100m 100

100ms

10m

VCE - Collector Emitter Voltage (V)

Safe Operating Area (Full Copper)

10ms

1ms

100µs

110

100m

100m 100

100ms

10m

VCE - Collector Emitter Voltage (V)

Safe Operating Area (Minimum Copper)

10ms

1ms

100µs

110

100m

see note below

Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary

breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the

power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when

mounted on a 50mm x 50mm FR4 PCB. The two cases show:

i) full copper present and

ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to

the edge of the PCB.

For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under

DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can

be tolerated for pulsed operation, while the shorter pulse widths (100µs and 1ms) being relevant

for assessment of switching conditions.

The ZHB6718 H-Bridge can be modelled within SPICE using the following transistor models

configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.

*ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97

.MODEL H6718N NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51

+ ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25

+ ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025

+ CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12

+ TF =0.95E-9 TR =2.25E-9

*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97

.MODEL H6718P PNP IS =6.8E-13 BF =480 IKF =2 VAF =23

+ ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4

+ VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04

+ RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714

+ CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9

+TR =23.7E-9

The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied

free of charge by Zetex for the purpose of research and design and may be used or copied intact (including

this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no

condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect

of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,

Oldham OL9 8NP, UK.

ZHB6718

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by

Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in

D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide

Germany USA Kwai Fong, Hong Kong Zetex plc 1997

Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet:

Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied

or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or

services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of

any product or se rvice .

45°

1234

8765

Dim Millimetres Inches

Min Typ Max Min Typ Max

A   1.7   0.067

A1 0.02  0.1 0.0008  0.004

b  0.7   0.028 

c 0.24  0.32 0.009  0.013

D 6.3  6.7 0.248  0.264

E 3.3  3.7 0.130  0.145

e1  4.59   0.180 

e2  1.53   0.060 

He 6.7  7.3 0.264  0.287

Lp 0.9   0.035  

α  15°   15°

β 10°   10° 