SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 (8 LEAD SOT223) PARTMARKING DETAIL ZHB6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPNs PNPs UNIT Collector-Base Voltage VCBO 20 -20 V Collector-Emitter Voltage VCEO 20 -20 V Emitter-Base Voltage VEBO 5 -5 V Peak Pulse Current ICM Continuous Collector Current IC 6 -6 A 2.5 -2.5 A Operating and Storage Temperature Range Tj:Tstg -55 to +150 C CONNECTION DIAGRAM SCHEMATIC DIAGRAM C3, C4 Q2 Q3 E2, E3 B3 4 3 B2 2 B4 C1, C2 B2 C3,C4 B1 E2,E3 1 B4 5 Q4 7 Q1 E1,E4 8 B1 C1,C2 6 E1, E4 B3 ZHB6718 THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at Tamb = 25C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Ptot Derate above 25C* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally Thermal Resistance - Junction to Ambient* Any single transistor on Q1 and Q3 on or Q2 and Q4 on equally 100 tP W W 10 16 mW/ C mW/ C 100 62.5 C/ W C/ W tP 40 D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 40 20 1ms 1.25 2 10ms 100ms 1s 10s Pulse Width 100s 30 D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 20 10 0 100us 1ms 10ms 100ms 1s Pulse Width 10s 100s Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On" Transient Thermal Resistance Single Transistor "On" 2.0 D=t1 tP t1 50 60 0 100us UNIT 60 D=t1 tP t1 80 Rth(j-amb) VALUE 10 1.5 Two devices on Full Copper 1 1.0 Minimum Copper Single device on Two devices on Single device on 0.5 0 0 20 40 60 80 100 120 T - Temperature (C) Derating curve 140 160 0.1 0.1 1 Pcb Area (inches squared) 10 Pd v PCB Area Comparison * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. Two devices on is the standard operating condition for the bridge. Eg opposing NPN/PNP pairs turned on. ZHB6718 NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C ). PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO 20 100 V IC=100A Collector-Emitter Breakdown Voltage V(BR)CEO 20 27 V IC=10mA* 5 8.3 V IE=100A Emitter-Base Breakdown V(BR)EBO Voltage Collector Cut-Off Current MIN. TYP. MAX. UNIT CONDITIONS. ICBO 100 nA VCB=16V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector Emitter Cut-Off Current ICES 100 nA VCES=16V Collector-Emitter Saturation Voltage VCE(sat) 8 70 130 15 150 200 mV mV mV IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2.5A, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.89 1.0 V IC=2.5A, IB=50mA* Base-Emitter Turn-On Voltage VBE(on) 0.79 V IC=2.5A, VCE=2V* Static Forward Current Transfer Ratio hFE 200 300 200 400 450 360 180 Transition Frequency fT 100 140 IC=10mA, VCE=2V* IC=100mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=10V f=100MHz Output Capacitance Cobo 23 pF VCB=10V, f=1MHz Turn-On Time t(on) 170 ns Turn-Off Time t(off) 400 ns VCC=10V, IC=1A IB1=-IB2=10mA 30 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%. ZHB6718 PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C ). PARAMETER SYMBOL Collector-Base Breakdown Voltage V(BR)CBO -20 -65 V IC=-100A Collector-Emitter Breakdown Voltage V(BR)CEO -20 -55 V IC=-10mA* -5 -8.8 V IE=-100A Emitter-Base Breakdown V(BR)EBO Voltage MIN. TYP. MAX. UNIT CONDITIONS. Collector Cut-Off Current ICBO -100 nA VCB=-15V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector Emitter Cut-Off Current ICES -100 nA VCES=-15V Collector-Emitter Saturation Voltage VCE(sat) -16 -130 -190 -40 -200 -260 mV mV mV IC=-100mA, IB=-10mA* IC=-1A, IB=-20mA* IC=-2.5A, IB=-200mA* Base-Emitter Saturation Voltage VBE(sat) -0.98 -1.1 V IC=-2.5A, IB=-200mA* Base-Emitter Turn-On Voltage VBE(on) 0.85 V IC=-2.5A, VCE=-2V* Static Forward Current Transfer Ratio hFE 300 300 150 35 475 450 230 70 30 Transition Frequency fT 150 180 IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* MHz IC=-50mA, VCE=-10V f=100MHz Output Capacitance Cobo 21 pF VCB=-10V, f=1MHz Turn-On Time t(on) 40 ns Turn-Off Time t(off) 670 ns VCC=-10V, IC=-1A IB1=IB2=-20mA 30 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%. ZHB6718 NPN TRANSISTOR TYPICAL CHARACTERISTICS 1 0.4 +25 C IC/IB=50 0.3 100m 100C 25C 0.2 10m IC/IB=100 IC/IB=50 IC/IB=10 1m 1m 1.2 10m 100m 1 0.6 0.4 0.1 10 0.0 1mA 10mA 100mA IC - Collector Current (A) Collector Current VCE(sat) v IC VCE(sat) vs IC 1.2 VCE=2V 100C 450 1.0 0.8 -55C 225 1A 10A IC/IB=50 0.6 -55C 10A 1.0 0.8 25C 1A -55C 25C 100C 0.4 0.2 0.2 0.0 10mA 1mA 100mA 1A 0 10A Collector Current -55C 25C 0.6 100C 0.4 0.2 0.0 1mA 10mA 100mA Collector Current VBE(on) vs IC 100mA VBE(sat) vs IC VCE=2V 0.8 10mA Collector Current hFE vs IC 1.0 0.0 1mA 1A 10A ZHB6718 PNP TRANSISTOR TYPICAL CHARACTERISTICS 1 0.6 +25C IC/IB=30 0.5 100m 0.4 0.3 10m 1m 1m 100m 25C -55C 0.1 0.0 10m 100C 0.2 IC/IB=50 IC/IB=30 IC/IB=10 1 10 1mA IC - Collector Current (A) 1.2 100C VCE=2V 1.4 10A 1A 10A IC/IB=10 1.2 25C 450 1.0 0.8 0.8 -55C 225 0.4 0.6 -55C 25C 100C 0.4 0.2 0.2 0.0 1mA 1.2 1A VCE(sat) vs IC 1.0 0.6 100mA Collector Current VCE(sat) v IC 1.4 10mA 10mA 100mA 0 10A 1A 10mA 100mA Collector Current Collector Current hFE vs IC VBE(sat) vs IC VCE=2V 1.0 -55C 0.8 25C 0.6 100C 0.4 0.2 0.0 1mA 0.0 1mA 10mA 100mA Collector Current VBE(on) vs IC 1A 10A ZHB6718 SAFE OPERATING AREA 10 10 1 1 DC 1s 100ms 10ms 1ms 100s 100m 10m 100m 100m 1 10 VCE - Collector Emitter Voltage (V) 100 Safe Operating Area (Full Copper) see note below 10m 100m DC 1s 100ms 10ms 1ms 100s 1 10 VCE - Collector Emitter Voltage (V) 100 Safe Operating Area (Minimum Copper) see note below Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when mounted on a 50mm x 50mm FR4 PCB. The two cases show: i) full copper present and ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to the edge of the PCB. For example, on a 50mm x 50mm full copper PCB, the ZHB6718 will safely dissipate 2W under DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can be tolerated for pulsed operation, while the shorter pulse widths (100s and 1ms) being relevant for assessment of switching conditions. The ZHB6718 H-Bridge can be modelled within SPICE using the following transistor models configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet. *ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97 .MODEL H6718N NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51 + ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25 + ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025 + CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12 + TF =0.95E-9 TR =2.25E-9 * * *ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97 .MODEL H6718P PNP IS =6.8E-13 BF =480 IKF =2 VAF =23 + ISE=0.8E-13 NE =1.5567 NR =1.00 BR =70 IKR=0.4 + VAR=7 ISC=7.5E-14 NC =1.19 RB =0.085 RE =0.04 + RC =0.045 CJC=70.02E-12 MJC=0.4685 VJC=0.7714 + CJE=203.6E-12 MJE=0.5029 VJE=0.9403 TF =0.71E-9 +TR =23.7E-9 * (C) 1997 ZETEX PLC The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton, Oldham OL9 8NP, UK. ZHB6718 He A E 8 e1 1 2 7 D e2 3 b 6 4 5 A1 o 45 c Lp Dim Millimetres Inches Min Typ Max Min Typ Max A 1.7 0.067 A1 0.02 0.1 0.0008 0.004 b 0.7 0.028 c 0.24 0.32 0.009 0.013 D 6.3 6.7 0.248 0.264 E 3.3 3.7 0.130 0.145 e1 4.59 0.180 3 e2 1.53 0.060 He 6.7 7.3 0.264 0.287 Lp 0.9 0.035 15 15 10 10 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1997 Internet: http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.