SMBJ5.0A thru SMBJ188A
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Revision: 23-Mar-12 1Document Number: 88392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount TRANSZORB® Transient Voltage Suppressors
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
PRIMARY CHARACTERISTICS
VWM 5.0 V to 188 V
PPPM 600 W
IFSM (uni-directional only) 100 A
TJ max. 150 °C
DO-214AA (SMB J-Bend)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) PPPM 600 W
Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 100 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
SMBJ5.0A thru SMBJ188A
www.vishay.com Vishay General Semiconductor
Revision: 23-Mar-12 2Document Number: 88392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: tp 50 ms
(2) Surge current waveform per fig. 3 and derate per fig. 2
(3) For bi-directional types having VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.8CA, the maximum VBR is 7.25 V
(6) V
F = 3.5 V at IF = 50 A (uni-directional only)
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT (1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA) (3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI BI MIN. MAX.
(+)SMBJ5.0A (5) KE KE 6.40 7.07 10 5.0 800 65.2 9.2
(+)SMBJ6.0A KG KG 6.67 7.37 10 6.0 800 58.3 10.3
(+)SMBJ6.5A KK AK 7.22 7.98 10 6.5 500 53.6 11.2
(+)SMBJ7.0A KM KM 7.78 8.60 10 7.0 200 50.0 12.0
(+)SMBJ7.5A KP AP 8.33 9.21 1.0 7.5 100 46.5 12.9
(+)SMBJ8.0A KR AR 8.89 9.83 1.0 8.0 50 44.1 13.6
(+)SMBJ8.5A KT AT 9.44 10.4 1.0 8.5 20 41.7 14.4
(+)SMBJ9.0A KV AV 10.0 11.1 1.0 9.0 10 39.0 15.4
(+)SMBJ10A KX AX 11.1 12.3 1.0 10 5.0 35.3 17.0
(+)SMBJ11A KZ KZ 12.2 13.5 1.0 11 5.0 33.0 18.2
(+)SMBJ12A LE BE 13.3 14.7 1.0 12 5.0 30.2 19.9
(+)SMBJ13A LG LG 14.4 15.9 1.0 13 1.0 27.9 21.5
(+)SMBJ14A LK BK 15.6 17.2 1.0 14 1.0 25.9 23.2
(+)SMBJ15A LM BM 16.7 18.5 1.0 15 1.0 24.6 24.4
(+)SMBJ16A LP LM 17.8 19.7 1.0 16 1.0 23.1 26.0
(+)SMBJ17A LR LR 18.9 20.9 1.0 17 1.0 21.7 27.6
(+)SMBJ18A LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2
(+)SMBJ20A LV LV 22.2 24.5 1.0 20 1.0 18.5 32.4
(+)SMBJ22A LX BX 24.4 26.9 1.0 22 1.0 16.9 35.5
(+)SMBJ24A LZ BZ 26.7 29.5 1.0 24 1.0 15.4 38.9
(+)SMBJ26A ME CE 28.9 31.9 1.0 26 1.0 14.3 42.1
(+)SMBJ28A MG MG 31.1 34.4 1.0 28 1.0 13.2 45.4
(+)SMBJ30A MK CK 33.3 36.8 1.0 30 1.0 12.4 48.4
(+)SMBJ33A MM CM 36.7 40.6 1.0 33 1.0 11.3 53.3
(+)SMBJ36A MP CP 40.0 44.2 1.0 36 1.0 10.3 58.1
(+)SMBJ40A MR CR 44.4 49.1 1.0 40 1.0 9.3 64.5
(+)SMBJ43A MT CT 47.8 52.8 1.0 43 1.0 8.6 69.4
(+)SMBJ45A MV MV 50.0 55.3 1.0 45 1.0 8.3 72.7
(+)SMBJ48A MX MX 53.3 58.9 1.0 48 1.0 7.8 77.4
(+)SMBJ51A MZ MZ 56.7 62.7 1.0 51 1.0 7.3 82.4
(+)SMBJ54A NE NE 60.0 66.3 1.0 54 1.0 6.9 87.1
(+)SMBJ58A NG NG 64.4 71.2 1.0 58 1.0 6.4 93.6
(+)SMBJ60A NK NK 66.7 73.7 1.0 60 1.0 6.2 96.8
(+)SMBJ64A NM NM 71.1 78.6 1.0 64 1.0 5.8 103
(+)SMBJ70A NP NP 77.8 86.0 1.0 70 1.0 5.3 113
(+)SMBJ75A NR NR 83.3 92.1 1.0 75 1.0 5.0 121
(+)SMBJ78A NT NT 86.7 95.8 1.0 78 1.0 4.8 126
(+)SMBJ85A NV NV 94.4 104 1.0 85 1.0 4.4 137
(+)SMBJ90A NX NX 100 111 1.0 90 1.0 4.1 146
(+)SMBJ100A NZ NZ 111 123 1.0 100 1.0 3.7 162
(+)SMBJ110A PE PE 122 135 1.0 110 1.0 3.4 177
(+)SMBJ120A PG PG 133 147 1.0 120 1.0 3.1 193
(+)SMBJ130A PK PK 144 159 1.0 130 1.0 2.9 209
(+)SMBJ150A PM PM 167 185 1.0 150 1.0 2.5 243
(+)SMBJ160A PP PP 178 197 1.0 160 1.0 2.3 259
(+)SMBJ170A PR PR 189 209 1.0 170 1.0 2.2 275
SMBJ188A PS PS 209 231 1.0 188 1.0 2.0 328
SMBJ5.0A thru SMBJ188A
www.vishay.com Vishay General Semiconductor
Revision: 23-Mar-12 3Document Number: 88392
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Mounted on minimum recommended pad layout
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient (1) RJA 100 °C/ W
Typical thermal resistance, junction to lead RJL 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SMBJ5.0A-E3/52 0.096 52 750 7" diameter plastic tape and reel
SMBJ5.0A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel
SMBJ5.0A-HE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel
SMBJ5.0A-HE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel
0.1
1
10
100
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
0 255075100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
d
01.0 2.0 3.0 4.0
IPPM - Peak Pulse Current, % IRSM
t - Time (ms)
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 µs Waveform
as defined by R.E.A.
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
6000
101 100 200
Uni-Directional
Bi-Directional
C
J
- Junction Capacitance (pF)
VWM - Reverse Stand-Off Voltage (V)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
Measured at
Zero Bias
VR, Measured at Stand-Off
Voltage VWM
SMBJ5.0A thru SMBJ188A
www.vishay.com Vishay General Semiconductor
Revision: 23-Mar-12 4Document Number: 88392
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1.0
10
100
0.001 0.01 0.1 100 1.0 10 1000
t
p
- Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
200
100
100101
8.3 ms Single Half Sine-Wave
Uni-Directional Only
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
DO-214AA (SMB-J-Bend) Mounting Pad Layout
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.205 (5.21)
0.220 (5.59)
0 (0)
0.008 (0.2)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
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Revision: 12-Mar-12 1Document Number: 91000
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