MMBT2222ATT1G - ON Semiconductor

October, 2010 − Rev. 4

1Publication Order Number:

MMBT2222ATT1/D

MMBT2222ATT1

General Purpose Transistor

NPN Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−416/SC−75 package which

is designed for low power surface mount applications.

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 40 Vdc

Collector−Base Voltage VCBO 75 Vdc

Emitter−Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation (Note 1)

TA = 25°C

PD150 mW

Thermal Resistance,

Junction−to−Ambient

RqJA 833 °C/W

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

recommended footprint.

Device Package Shipping†

ORDERING INFORMATION

MARKING DIAGRAM

COLLECTOR

BASE

EMITTER

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†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1P M G

MMBT2222ATT1G SOT−416

(Pb−Free)

3000 / Tape & Reel

1P = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

CASE 463

SOT−416/SC−75

STYLE 1

MMBT2222ATT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO 40 −Vdc

Collector−Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO 75 −Vdc

Emitter−Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO 6.0 −Vdc

Base Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

IBL −20 nAdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB = 3.0 Vdc)

ICEX −10 nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

HFE

100

−

Collector−Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

−

0.3

1.0

Vdc

Base −Emitter Saturation Voltage

(IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat)

0.6

−

1.2

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT300 −MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo −8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo −30 pF

Input Impedance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hie 0.25 1.25 kW

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hre −4.0 X 10−4

Small−Signal Current Gain

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hfe 75 375 −

Output Admittance

(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)

hoe 25 200 mmhos

Noise Figure

(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)

NF −4.0 dB

SWITCHING CHARACTERISTICS

Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td−10

Rise Time tr−25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts−225 ns

Fall Time tf−60

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

MMBT2222ATT1

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Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

-2 V < 2 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

-4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAINVCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ = 125°C

TJ = 25°C

25°C

-55°C

IC = 1.0 mA 10 mA 150 mA 500 mA

VCE = 1.0 V

VCE = 10 V

MMBT2222ATT1

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Figure 5. Turn −On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn −Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts - 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 W

500 mA, RS = 200 W

100 mA, RS = 2.0 kW

50 mA, RS = 4.0 kW

f = 1.0 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

MMBT2222ATT1

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Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.01

0.1

10.10.010.001

0.2

0.3

0.5

0.7

0.8

1.0

1.1

1.3

Figure 13. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.001

0.2

0.3

0.5

0.6

0.7

0.9

1.1

1.2

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

IC/IB = 10

150°C

−55°C

25°C0.4

0.6

0.9

1.2 IC/IB = 10

150°C

−55°C

25°C

0.4

0.8

1.0

VCE = 1 V

150°C

−55°C

25°C

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

+0.5

COEFFICIENT (mV/ C)

-1.0

-1.5

-2.5

RqVC for VCE(sat)

RqVB for VBE

-2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50

Figure 15. Safe Operating Area

VCE (Vdc)

1001010.10.01

0.001

0.01

0.1

IC (A)

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

MMBT2222ATT1

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PACKAGE DIMENSIONS

SC−75/SOT−416

CASE 463−01

ISSUE F

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

L0.10 0.15 0.20

1.50 1.60 1.70

0.004 0.006 0.008

0.061 0.063 0.065

0.70 0.80 0.90 0.027 0.031 0.035

0.787

0.031

0.508

0.020 1.000

0.039

ǒmm

inchesǓ

SCALE 10:1

0.356

0.014

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.803

0.071

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MMBT2222ATT1/D

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