DATA SH EET
Product specification
Supersedes data of 1998 Oct 16
File under Integrated Circuits, IC01
2000 Mar 08
INTEGRATED CIRCUITS
TDA1519C
22 W BTL or 2 ×11 W stereo power
amplifier
2000 Mar 08 2
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
FEATURES
Requires very few external components for Bridge-Tied
Load (BTL)
Stereo or BTL application
High output power
Low offset voltage at output (important for BTL)
Fixed gain
Good ripple rejection
Mute/standby switch
Load dump protection
AC and DC short-circuit-safe to ground and VP
Thermally protected
Reverse polarity safe
Capability to handle high energy on outputs (VP=0V)
No switch-on/switch-off plop
Protected against electrostatic discharge
Low thermal resistance
Identical inputs (inverting and non-inverting)
Pin compatible with TDA1519B (TDA1519C and
TDA1519CSP).
GENERAL DESCRIPTION
The TDA1519C is an integrated class-B dual output
amplifier in a 9-lead plastic single in-line (SIL) power or
20-lead heatsink small outline package.
For the TDA1519CTH (SOT418-2) the heatsink is
positioned on top of the package, thereby allowing an
external heatsink to be mounted on top. The heatsink of
the TDA1519CTD (SOT397-1) is facing the PCB thereby
allowing the heatsink to be soldered on the copper area of
the PCB.
ORDERING INFORMATION
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA1519C SIL9P plastic single in-line power package; 9 leads SOT131-2
TDA1519CSP SMS9P plastic surface mounted single in-line power package; 9 leads SOT354-1
TDA1519CTH HSOP20 heatsink small outline package; 20 leads; low stand-off SOT418-2
TDA1519CTD HSOP20 heatsink small outline package; 20 leads SOT397-1
2000 Mar 08 3
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
VPsupply voltage operating 6.0 14.4 17.5 V
non-operating −−30 V
load dump protected −−45 V
IORM repetitive peak output current −−4A
I
q(tot) total quiescent current 40 80 mA
Istb standby current 0.1 100 µA
Isw(on) switch-on current −−40 µA
Inputs
Ziinput impedance BTL 25 −−k
stereo 50 −−k
Stereo application
Pooutput power THD = 10%
RL=4Ω−6W
R
L
=2Ω−11 W
αcs channel separation 40 −−dB
Vn(o)(rms) noise output voltage (RMS value) 150 −µV
BTL application
Pooutput power THD = 10%; RL=4Ω− 22 W
SVRR supply voltage ripple rejection RS=0
f = 100 Hz 34 −−dB
f = 1 to 10 kHz 48 −−dB
∆VOODC output offset voltage −−250 mV
Tjjunction temperature −−150 °C
2000 Mar 08 4
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
BLOCK DIAGRAM
Fig.1 Block diagram.
MGL491
handbook, full pagewidth
60
k
input
reference
voltage power
ground
(substrate)
+
+
5
signal
ground
2 7
9
6
183
18.1 k
3
TDA1519C
15 k
15 k
VA
VA
Cm
mute switch
power stage
60
k
standby
reference
voltage
mute
reference
voltage
1
NINV
RR
INV
OUT2
M/SS
OUT1
GND1 GND2VP
4
8
183
18.1 k
VA
Cm
mute switch
power stage
+
mute
switch
standby
switch
× 1
VP
The pin numbers refer to the TDA1519C and TDA1519CSP.
2000 Mar 08 5
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
PINNING
SYMBOL PIN DESCRIPTION
TDA1519C;
TDA1519CSP TDA1519CTD TDA1519CTH
NINV 1 19 2 non-inverting input
GND1 2 20 1 ground 1 (signal)
RR 3 1 20 supply voltage ripple rejection
OUT1 4 3 18 output 1
GND2 5 5 16 ground 2 (substrate)
OUT2 6 8 13 output 2
VP7 10 11 positive supply voltage
M/SS 8 11 10 mute/standby switch input
INV 9 12 9 inverting input
n.c. 2, 4, 6, 7, 9
and 13 to 18 3 to 8, 12, 14,
15, 17 and 19 not connected
Fig.2 Pin configuration
(SOT131-2 and 354-1).
h
alfpage
NINV
GND1
RR
OUT1
GND2
OUT2
VP
M/SS
INV
1
2
3
4
5
6
7
8
9
TDA1519C
TDA1519CSP
MGR561
f
page
RR
n.c.
OUT1
n.c.
GND2
n.c.
n.c.
OUT2
n.c.
VP
GND1
NINV
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV
M/SS
1
2
3
4
5
6
7
8
9
10 11
12
20
19
18
17
16
15
14
13
TDA1519CTD
MGL937
Fig.3 Pin configuration
(SOT397-1).
f
page
GND1
NINV
n.c.
n.c.
n.c.
n.c.
n.c.
n.c.
INV
M/SS
RR
n.c.
OUT1
n.c.
n.c.
n.c.
GND2
OUT2
n.c.
VP
1
2
3
4
5
6
7
8
9
10 11
12
20
19
18
17
16
15
14
13
TDA1519CTH
MGL936
Fig.4 Pin configuration
(SOT418-2).
2000 Mar 08 6
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
FUNCTIONAL DESCRIPTION
TheTDA1519Ccontainstwoidenticalamplifierswithdifferentialinputstages. The gain of each amplifier is fixed at 40 dB.
A special feature of this device is the mute/standby switch which has the following features:
Low standby current (<100 µA)
Low mute/standby switching current (low cost supply switch)
Mute condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VPsupply voltage operating 17.5 V
non-operating 30 V
load dump protected;
during 50 ms; tr2.5 ms 45 V
Vsc AC and DC short-circuit-safe voltage 17.5 V
Vrp reverse polarity voltage 6V
energy handling capability at outputs VP=0V 200 mJ
IOSM non-repetitive peak output current 6A
I
ORM repetitive peak output current 4A
P
tot total power dissipation see Fig.5 25 W
Tjjunction temperature 150 °C
Tstg storage temperature 55 +150 °C
Fig.5 Power derating curve for SIL9P.
handbook, halfpage
25 0 50 150
30
10
0
20
MGL492
100
Ptot
(W)
Tamb (°C)
(1)
(2)
(3)
(1) Infinite heatsink.
(2) Rth(c-a) = 5 K/W.
(3) Rth(c-a) = 13 K/W.
2000 Mar 08 7
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
THERMAL CHARACTERISTICS
DC CHARACTERISTICS
VP= 14.4 V; Tamb =25°C; measurements taken using Fig.6; unless otherwise specified.
Notes
1. The circuit is DC adjusted at VP= 6 to 17.5 V and AC operating at VP= 8.5 to 17.5 V.
2. At VP= 17.5 to 30 V, the DC output voltage 0.5VP.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air
TDA1519C 40 K/W
TDA1519CTH and TDA1519CTD 40 K/W
Rth(j-c) thermal resistance from junction to case
TDA1519C 3 K/W
TDA1519CTH and TDA1519CTD 3 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
VPsupply voltage note 1 6.0 14.4 17.5 V
Iq(tot) total quiescent current 40 80 mA
VODC output voltage note 2 6.95 V
∆VOODC output offset voltage −− 250 mV
Mute/standby switch
Vsw(on) switch-on voltage level 8.5 −−V
Mute condition
Vmute mute voltage 3.3 6.4 V
VOoutput signal in mute position VI= 1 V (max.); f = 20 Hz to 15 kHz −− 20 mV
∆VOODC output offset voltage −− 250 mV
Standby condition
Vstb standby voltage standby mode 0 2V
I
stb standby current standby mode −− 100 µA
Isw(on) switch-on current 12 40 µA
2000 Mar 08 8
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
AC CHARACTERISTICS
VP= 14.4 V; RL=4; f = 1 kHz; Tamb =25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Stereo application (see Fig.6)
Pooutput power note 1
THD = 0.5% 4 5 W
THD = 10% 5.5 6.0 W
RL=2; note 1
THD = 0.5% 7.5 8.5 W
THD = 10% 10 11 W
THD total harmonic distortion Po=1W 0.1 %
fro(l) low frequency roll-off 3 dB; note 2 45 Hz
fro(h) high frequency roll-off 1dB 20 −−kHz
Gv(cl) closed-loop voltage gain 39 40 41 dB
SVRR supply voltage ripple rejection on; notes 3 and 4 40 −−dB
on; notes 3 and 5 45 −−dB
mute; notes 3 and 6 45 −−dB
standby;
notes 3 and 6 80 −−dB
Ziinput impedance 50 60 75 k
Vn(o)(rms) noise output voltage (RMS value) note 7
on; RS=0Ω−150 −µV
on; RS=10kΩ− 250 500 µV
mute; note 8 120 −µV
α
cs channel separation RS=10k40 −−dB
∆Gv(ub)channel unbalance 0.1 1 dB
BTL application (see Fig.7)
Pooutput power note 1
THD = 0.5% 15 17 W
THD = 10% 20 22 W
output power at VP= 13.2 V note 1
THD = 0.5% 13 W
THD = 10% 17.5 - W
THD total harmonic distortion Po=1W 0.1 %
Bppower bandwidth THD = 0.5%;
Po=1 dB; with
respect to 15 W
35 to
15000 Hz
fro(l) low frequency roll-off 1 dB; note 2 45 Hz
fro(h) high frequency roll-off 1dB 20 −−kHz
Gv(cl) closed-loop voltage gain 45 46 47 dB
2000 Mar 08 9
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
Notes
1. Output power is measured directly at the output pins of the IC.
2. Frequency response externally fixed.
3. Ripple rejection measured at the output with a source impedance of 0 (maximum ripple amplitude of 2 V).
4. Frequency f = 100 Hz.
5. Frequency between 1 and 10 kHz.
6. Frequency between 100 Hz and 10 kHz.
7. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz.
8. Noise output voltage independent of RS (Vi= 0 V).
SVRR supply voltage ripple rejection on; notes 3 and 4 34 −−dB
on; notes 3 and 5 48 −−dB
mute; notes 3 and 6 48 −−dB
standby;
notes 3 and 6 80 −−dB
Ziinput impedance 25 30 38 k
Vn(o)(rms) noise output voltage (RMS value) note 7
on; RS=0Ω−200 −µV
on; RS=10kΩ− 350 700 µV
mute; note 8 180 −µV
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2000 Mar 08 10
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
APPLICATION INFORMATION
Fig.6 Stereo application diagram (SOT131-2 and SOT354-1).
handbook, full pagewidth
2200
µF
1000
µF
100 µF100
nF
220 nF 60 k
input
reference
voltage
40 dB
+
1220 nF
60 k
40 dB
+
9
546
inverting inputnon-inverting input
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
38
7
standby switch
MGL493
Fig.7 BTL application diagram (SOT131-2 and SOT354-1).
handbook, full pagewidth
2200
µF
100
nF
220 nF 60 k
RL = 4
input
reference
voltage
40 dB
+
160 k
40 dB
+
9
546
non-inverting input
to pin 9
internal
1/2 VP
VP
power
ground
2
signal
ground
TDA1519C
38
7
standby switch
MGL494
to pin 1
2000 Mar 08 11
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
Fig.8 Total quiescent current (Iq(tot)) as a function of supply voltage (VP).
handbook, halfpage
020
60
30
40
50
MGR539
4 8 12 16
Iq(tot)
(mA)
VP (V)
Fig.9 Output power (Po) as a function of supply voltage (VP) for BTL application at RL=4; f =1 kHz.
handbook, halfpage
020
30
0
10
20
MGR540
4 8 12 16
Po
(W)
VP (V)
THD = 10%
0.5%
2000 Mar 08 12
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
Fig.10 Total harmonic distortion (THD) as a function of output power (Po) for BTL application at RL=4;
f = 1 kHz.
handbook, halfpage
12
0
10111010
2
MGR541
4
8
THD
(%)
Po (W)
Fig.11 Total harmonic distortion (THD) as a function of operating frequency (f) for BTL application at RL=4;
P
o=1W.
handbook, halfpage
0.6
010 102103104
MGR542
0.2
0.4
THD
(%)
f (Hz)
2000 Mar 08 13
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
PACKAGE OUTLINES
UNIT A b
max. bp2 cD
(1) E(1) Z(1)
deD
hLj
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 4.6
4.4 1.1 0.75
0.60 0.48
0.38 24.0
23.6 20.0
19.6 10 2.54
12.2
11.8 3.4
3.1
A
max.
1
2.0
Eh
62.00
1.45
2.1
1.8
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
17.2
16.5
SOT131-2 95-03-11
99-12-17
0 5 10 mm
scale
Q
0.25
w
0.03
x
D
L
A
E
c
A2
Q
wM
bp
d
D
Ze
xh
19
E
h
non-concave
seating plane
1
b
j
SIL9P: plastic single in-line power package; 9 leads SOT131-2
view B: mounting base side
B
2000 Mar 08 14
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
UNIT A A1A2A3bpcD
(1) E(1) Z(1)
deD
h
E
h
L
p
L
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 4.9
4.2 0.35
0.05 4.6
4.4 0.25 0.75
0.60 24.0
23.6
0.48
0.38 10
20.0
19.6 12.2
11.8 2.54 3.4
2.8 2.1
1.9
63°
0°
2.00
1.45
3.4
3.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
7.4
6.6
SOT354-1
0 5 10 mm
scale
Q
j
0.15
wxy θ
D
c
A
1
Q
heatsink
heatsink
θ
A
Lp
(A3)
A2
0.030.25
wM
bp
d
Dh
Ze
x
91
j
E
h
non-concave
98-10-08
99-12-17
SMS9P: plastic surface mounted single in-line power package; 9 leads SOT354-1
L
E
y
2000 Mar 08 15
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
UNIT A4(1)
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
98-02-25
99-11-12
IEC JEDEC EIAJ
mm +0.12
0.02
3.5 0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT418-2
0 5 10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height SOT418-2
A
max.
detail X
A2
3.5
3.2
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.7
1.5 2.5
2.0
v
0.25
w
0.25
yZ
8°
0°
θ
0.07
x
0.03
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bpc
0.32
0.23
e
1.27
D(2)
16.0
15.8
E(2)
11.1
10.9
0.53
0.40
A3
A4
A2(A3)
Lpθ
A
Q
D
y
x
HE
E
c
vMA
X
A
bpwM
Z
D1D2
E2
E1
e
20 11
110
pin 1 index
2000 Mar 08 16
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
UNIT A1
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-11-03
99-11-12
IEC JEDEC EIAJ
mm 0.3
0.1
3.6 0.35
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT397-1
0 5 10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads SOT397-1
A
max.
D
yHE
A1A4
A2
bp
(A3)
E
c
vMA
X
A
Lp
detail X
θ
A
Q
wM
Z
D1D2
E2
E1
e
110
20 11
pin 1 index
A2
3.3
3.0
A4
0.1
0
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.5
1.4 2.5
2.0
v
0.25
w
0.25
yZ
8°
0°
θ
0.1
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bpc
0.32
0.23
e
1.27
D(1)
16.0
15.8
E(1)
11.1
10.9
0.53
0.40
A3
2000 Mar 08 17
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
SOLDERING
Introduction
Thistextgivesaverybrief insighttoacomplex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsaremixedon
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.
Through-hole mount packages
SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Surface mount packages
REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardbyscreenprinting,stencillingor
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
WAVE SOLDERING
Conventional single wave soldering is not recommended
forsurface mountdevices(SMDs) orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Forpackages withleadson foursides,the footprintmust
be placed at a 45°angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
MANUAL SOLDERING
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Mar 08 18
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
Suitability of IC packages for wave, reflow and dipping soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
MOUNTING PACKAGE SOLDERING METHOD
WAVE REFLOW(1) DIPPING
Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable(2) suitable
Surface mount BGA, LFBGA, SQFP, TFBGA not suitable suitable
HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, SMS not suitable(3) suitable
PLCC(4), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(4)(5) suitable
SSOP, TSSOP, VSO not recommended(6) suitable
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
2000 Mar 08 19
Philips Semiconductors Product specification
22 W BTL or 2 × 11 W stereo power
amplifier TDA1519C
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 69
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Printed in The Netherlands 753503/02/pp20 Date of release: 2000 Mar 08 Document order number: 9397 750 06633