TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices Qualified Level
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N4449U
2N4449UA
2N4449UB
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol
All UB All others Unit
Collector-Emitter Voltage VCEO 20 15 Vdc
Emitter-Base Voltage VEBO 6.0 4.5 Vdc
Collector-Base Voltage VCBO 40 Vdc
Collector-Emitter Voltage VCES 40 Vdc
@ TA = +250C
@ TC = +250C
Total Power Dissipation 2N2369A; 2N4449
All UA
All UB
All U
PT
0.50(1)
0.50(5)
0.40(6)
0.60(3)
1.2(2)
1.2(2)
1.4(7)
1.5(4)
W
W
Operating & Storage Junction Temperature Range
Top, Tstg
-65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol
Max. Unit
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
All U
RθJC
146
125
135
117
0
C/mW
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
All UA
All UB
All U
RθJA
325
350
437
291
0
C/mW
1) Derate linearly 3.08 mW/0C above TA = +37.50C 5) Derate linearly 2.86 mW/0C above TC = +63.50C
2) Derate linearly 6.85 mW/0C above TC = +250C 6) Derate linearly 2.29 mW/0C above TC = +63.50C
3) Derate linearly 3.44 mW/0C above TA = +63.50C 7) Derate linearly 8.00 mW/0C above TC = +63.50C
4) Derate linearly 8.55 mW/0C above TC = +63.50C
TO-18* (TO-206AA)
2N2369A
TO-46 (TO-206AB)
2N4449
SURFACE MOUNT
UA*
SURFACE MOUNT
UB*
SURFACE MOUNT
U*
*See appendix A for
package outline
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 15 Vdc
Collector-Emitter Cutoff Current
VCE = 20 Vdc ICES 0.4 µAdc
Emitter-Base Breakdown Voltage
VEB = 4.5 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
IEBO
10
0.25
µAdc
Collector-Base Breakdown Voltage
VCB = 40 Vdc
Collector-Base Cutoff Current
VCB = 32 Vdc
ICBO
10
0.2
µAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 0.35 Vdc
IC = 30 mAdc, VCE = 0.4 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 100 mAdc, VCE = 1.0 Vdc
hFE
40
30
40
20
120
120
120
120
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
VCE(sat)
0.20
0.25
0.45
Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
VBE(sat)
0.70
0.80
0.85
0.90
1.20
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz hfe
5.0
10
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 4.0 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 5.0 pF
(1)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc ton 12 ηs
Turn-Off Time
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc toff 18 ηs
Charge Storage Time
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc ts 13 ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
