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TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
1
The LUMENOLOGY r Company r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
DConverts Light Intensity to Output Voltage
DMonolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
DHigh Sensitivity
DSingle Voltage Supply Operation (2.7 V to
5.5 V)
DLow Noise (200 μVrms Typ to 1 kHz)
DRail-to-Rail Output
DHigh Power-Supply Rejection (35 dB at
1 kHz)
DCompact 3-Leaded Plastic Package
DRoHS Compliant (−LF Package Only)
Description
The TSL257 is a high-sensitivity low-noise light-to-voltage optical converter that combines a photodiode and
a transimpedance amplifier on a single monolithic CMOS integrated circuit. Output voltage is directly
proportional to light intensity (irradiance) on the photodiode. The TSL257 has a transimpedance gain of 320 MΩ.
The device has improved offset voltage stability and low power consumption and is supplied in a 3-lead clear
plastic sidelooker package with an integral lens. When supplied in the lead (Pb) free package, the device is
RoHS compliant.
Functional Block Diagram
Voltage
Output
+
−
Available Options
DEVICE TAPACKAGE − LEADS PACKAGE DESIGNATOR ORDERING NUMBER
TSL257 0°C to 70°C3-lead Sidelooker S TSL257
TSL257 0°C to 70°C3-lead Sidelooker — Lead (Pb) Free S TSL257−LF
TSL257 0°C to 70°C3-lead Surface-Mount Sidelooker — Lead (Pb) Free SM TSL257SM−LF
Terminal Functions
TERMINAL
DESCRIPTION
NAME NO. DESCRIPTION
GND 1 Ground (substrate). All voltages are referenced to GND.
OUT 3 Output voltage
VDD 2Supply voltage
r
r
Texas Advanced Optoelectronic Solutions Inc.
1001 Klein Road S Suite 300 S Plano, TX 75074 S (972) 673-0759
PACKAGE S
SIDELOOKER
(FRONT VIEW)
1
GND
2
VDD
3
OUT
PACKAGE SM
SURFACE MOUNT
SIDELOOKER
(FRONT VIEW)
1
GND
2
VDD
3
OUT
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
2
r
r
Copyright E 2007, TAOS Inc. The LUMENOLOGY r Company
www.taosinc.com
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) 6 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO ±10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C 5 s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA −25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg −25°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package) 260°C. . . . . . . . . . . . . . . . . . . .
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package) 260°C. . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN MAX UNIT
Supply voltage, VDD 2.7 5.5 V
Operating free-air temperature, TA0 70 °C
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted)
(see Notes 2 and 3)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VDDark voltage Ee = 0 0 15 mV
V
Maximum output voltage swing
VDD = 4.5 V, No Load 4.49
V
VOM Maximum output voltage swing VDD = 4.5 V, RL = 10 kΩ4 4.2 V
VOOutput voltage Ee = 1.54 μW/cm2, λp = 470 nm, Note 5 1.6 2 2.4 V
αVD Temperature coefficient of dark voltage (VD) TA = 0°C to 70°C−15 μV/°C
λp = 428 nm, see Notes 4 and 8 1.18
N
Irradiance responsivity
λp = 470 nm, see Notes 5 and 8 1.30
V/( W/cm2)
NeIrradiance responsivity λp = 565 nm, see Notes 6 and 8 1.58 V/(μW/cm2)
λp = 645 nm, see Notes 7 and 8 1.68
PSRR Power supply rejection ratio fac = 100 Hz, see Note 9 55 dB
pp y j
fac = 1 kHz, see Note 9 35 dB
IDD Supply current Ee = 1.54 μW/cm2, λp = 470 nm, Note 5 1.9 3.5 mA
NOTES: 2. Measured with RL = 10 kΩ between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength λp = 428 nm,
spectral halfwidth Δλ½ = 65 nm.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength λp = 470 nm,
spectral halfwidth Δλ½ = 35 nm.
6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength λp = 565 nm,
spectral halfwidth Δλ½ = 28 nm.
7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength λp = 645 nm,
spectral halfwidth Δλ½ = 25 nm.
8. Irradiance responsivity is characterized over the range VO = 0.1 V to 4.5 V. The best-fit straight line of Output Voltage VO versus
Irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.
9. Power supply rejection ratio PSRR is defined as 20 log (ΔVDD(f)/ΔVO(f)) with VDD(f = 0) = 5 V and VO(f = 0) = 2 V.
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
3
The LUMENOLOGY r Company r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
Switching Characteristics at VDD = 5 V, TA = 25°C, λp = 470 nm, RL = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
trOutput pulse rise time, 10% to 90% of final value See Note 10 and Figure 1 160 250 μs
tfOutput pulse fall time, 10% to 90% of final value See Note 10 and Figure 1 150 250 μs
tsOutput settling time to 1% of final value See Note 10 and Figure 1 330 μs
Integrated noise voltage f = dc to 1 kHz Ee = 0 200 μVrms
f = 10 Hz Ee = 0 6
VnOutput noise voltage, rms f = 100 Hz Ee = 0 6μV/√Hz rms
n
pg,
f = 1 kHz Ee = 0 7
μ/
NOTE 10: Switching characteristics apply over the range VO = 0.1 V to 4.5 V.
PARAMETER MEASUREMENT INFORMATION
VOLTAGE WAVEFORM
TEST CIRCUIT
Input
Ee
10%
90%
Output
(see Note B)
tr
TSL257 RL
VDD
2
1
3
+
−
Output
Pulse
Generator
LED
(see Note A) tf
90%
10%
NOTES: A. The input irradiance is supplied by a pulsed InGaN light-emitting diode with the following characteristics: λp = 470 nm,
tr < 1 μs, tf < 1 μs.
B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi ≥ 1 MΩ, Ci ≤ 20 pF.
Figure 1. Switching Times
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
4
r
r
Copyright E 2007, TAOS Inc. The LUMENOLOGY r Company
www.taosinc.com
TYPICAL CHARACTERISTICS
Figure 2
0.6
0
300 500 700 900
Relative Responsivity
1.2
1100
1.0
0.8
0.4
λ − Wavelength − nm
TA = 25°C
0.2
1.4
1.6
PHOTODIODE SPECTRAL RESPONSIVITY
Normalized to
470 nm
Figure 3
20
0
80
60
40
10
f − Frequency − Hz
10 102106
105
104
103
Power Supply Rejection Ratio — dB
30
70
50
POWER SUPPLY REJECTION RATIO
vs
FREQUENCY
Figure 4
4
2
1
0
700
10
DARK VOLTAGE
vs
FREE-AIR TEMPERATURE
10 30 50
− Dark Voltage − mV
VD
3
TA − Free-Air Temperature − °C
6020 40
9
7
6
5
8
VDD = 5 V
Figure 5
0
NORMALIZED RESPONSE
vs
ANGULAR DISPLACEMENT
−90 −70 −50 −30 10 30 50 70 9
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Normalized Response
−10
Angular Displacement − 5
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
5
The LUMENOLOGY r Company r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
APPLICATION INFORMATION
PCB Pad Layout
Suggested PCB pad layout guidelines for the SM surface mount package are shown in Figure 6.
3.2
1.0 1.0 1.0
1.01.0
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
Figure 6. Suggested SM Package PCB Layout
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
6
r
r
Copyright E 2007, TAOS Inc. The LUMENOLOGY r Company
www.taosinc.com
MECHANICAL DATA
The device is supplied in a clear plastic three-lead sidelooker through-hole package (S).
PACKAGE S PLASTIC SINGLE-IN-LINE SIDE-LOOKER PACKAGE
1.642.60
2.30
4.60
R 0.90
1.80
0.42
1
2y 2
0.47 TYP
TOP VIEW
SIDE VIEWFRONT VIEW
0.42
1.56
14.86 + 0.50
4.60
0.15
Note B
Lead Free
Available
Pb
NOTES: A. All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.
B. Dimension is to center of lens arc, which is located below the package face.
C. The integrated photodiode active area is round with a typical diameter of 0.75 mm and is typically located in the center of the lens
and 0.97 mm below the top of the lens surface.
D. Index of refraction of clear plastic is 1.55.
E. Lead finish for TSL257: solder dipped, 63% Sn/37% Pb. Lead finish for TSL257−LF: solder dipped, 100% Sn.
F. This drawing is subject to change without notice.
Figure 7. Package S — Single-In-Line Side-Looker Package Configuration
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
7
The LUMENOLOGY r Company r
r
Copyright E 2007, TAOS Inc.
www.taosinc.com
MECHANICAL DATA
PACKAGE SM PLASTIC SURFACE MOUNT SIDE-LOOKER PACKAGE
1.642.60
2.30
4.60
R 0.90
1.80
0.42
1.00
0.47 TYP
TOP VIEW
SIDE VIEWFRONT VIEW
0.42
5.73 + 0.50
4.60
0.15 Note B
2.59
0.62 + 0.10 1.97
0.62 +0.10
−0.15
Lead Free
Pb
2y 2
NOTES: A. All linear dimensions are in millimeters; tolerance is ± 0.25 mm unless otherwise stated.
B. Dimension is to center of lens arc, which is located below the package face.
C. The integrated photodiode active area is typically located in the center of the lens and 0.97 mm below the top of the lens surface.
D. Index of refraction of clear plastic is 1.55.
E. Lead finish for TSL257SM−LF: solder dipped, 100% Sn.
F. This drawing is subject to change without notice.
Figure 8. Package SM — Surface Mount Side-Looker Package Configuration
ams AG
Technical content still valid
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E − SEPTEMBER 2007
8
r
r
Copyright E 2007, TAOS Inc. The LUMENOLOGY r Company
www.taosinc.com
PRODUCTION DATA — information in this document is current at publication date. Products conform to
specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard
warranty. Production processing does not necessarily include testing of all parameters.
LEAD-FREE (Pb-FREE) and GREEN STATEMENT
Pb-Free (RoHS) TAOS’ terms Lead-Free or Pb-Free mean semiconductor products that are compatible with the current
RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous
materials. Where designed to be soldered at high temperatures, TAOS Pb-Free products are suitable for use in specified
lead-free processes.
Green (RoHS & no Sb/Br) TAOS defines Green to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and
Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material).
Important Information and Disclaimer The information provided in this statement represents TAOS’ knowledge and
belief as of the date that it is provided. TAOS bases its knowledge and belief on information provided by third parties,
and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate
information from third parties. TAOS has taken and continues to take reasonable steps to provide representative
and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and
chemicals. TAOS and TAOS suppliers consider certain information to be proprietary, and thus CAS numbers and other
limited information may not be available for release.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this
document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised
to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems.
TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product
design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that
the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular
purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages.
TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR
USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY
RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY
UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMER’S RISK.
LUMENOLOGY, TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are registered trademarks of Texas Advanced
Optoelectronic Solutions Incorporated.
ams AG
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