PD - 97470 AUIRF3710Z AUIRF3710ZS AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features O O O O O O O Low On-Resistance 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D VDSS = 100V RDS(on) = 18m G ID = 59A Description S Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB AUIRF3710Z D2Pak AUIRF3710ZS Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V Parameter 59 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V 42 c IDM Pulsed Drain Current PD @TC = 25C Maximum Power Dissipation 160 W VGS Linear Derating Factor Gate-to-Source Voltage 1.1 20 W/C V EAS Single Pulse Avalanche Energy (Thermally limited) 170 mJ EAS (tested) Single Pulse Avalanche Energy Tested Value 200 IAR Avalanche Current EAR TJ Repetitive Avalanche Energy Operating Junction and TSTG Storage Temperature Range 240 c h Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance k See Fig.12a,12b,15,16 A -55 to + 175 mJ C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Typ. Max. Units --- 0.92 C/W Case-to-Sink, Flat, Greased Surface 0.50 --- Junction-to-Ambient (PCB Mount, steady state) --- 40 RJC Junction-to-Case RCS RJA j Parameter d HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 3/19/10 AUIRF3710Z/S Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) Parameter V(BR)DSS VDSS/TJ RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 100 --- --- 2.0 35 --- --- --- --- --- 0.10 14 --- --- --- --- --- --- --- --- 18 4.0 --- 20 250 200 -200 V V/C m V S A nA Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 35A VDS = VGS, ID = 250A VDS = 50V, ID = 35A VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) Qg Qgs Qgd td(on) tr td(off) tf LD LS Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance --- --- --- --- --- --- --- --- --- 82 19 27 17 77 41 56 4.5 7.5 120 28 40 --- --- --- --- --- nC ns nH ID = 35A VDS = 80V VGS = 10V VDD = 50V ID = 35A RG = 6.8 VGS = 10V Between lead, f f D --- 6mm (0.25in.) from package --- --- --- --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 80V, = 1.0MHz VGS = 0V, VDS = 0V to 80V G S Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 2900 290 150 1130 170 280 pF Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.27mH, RG = 25, IAS = 35A, VGS =10V. Part not recommended for use above this value. ISD 35A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. 2 Min. Typ. Max. Units --- --- 59 --- --- 240 --- --- --- --- 50 100 1.3 75 160 Conditions MOSFET symbol A V ns nC D showing the integral reverse G p-n junction diode. TJ = 25C, IS = 35A, VGS = 0V TJ = 25C, IF = 35A, VDD = 25V di/dt = 100A/s f S f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . This value determined from sample failure population, starting TJ = 25C, L = 0.27mH,RG = 25, IAS = 35A, VGS =10V This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C. This is only applied to TO-220AB pakcage. www.irf.com AUIRF3710Z/S Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220AB 2 D PAK Machine Model N/A MSL1 Class M4 AEC-Q101-002 ESD Human Body Model Class H1C AEC-Q101-001 Charged Device Model Class C3 AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF3710Z/S 1000 1000 100 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP 1 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 0.1 100 BOTTOM 4.5V 10 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 1 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 1000 120 GFS, Forward Transconductance (S) ID, Drain-to-Source Current () 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) T J = 175C 100 10 T J = 25C 1 VDS = 25V 20s PULSE WIDTH 0 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 1 10 100 TJ = 25C 80 T J = 175C 60 40 20 VDS = 15V 20s PULSE WIDTH 0 0 10 20 30 40 50 60 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com 70 AUIRF3710Z/S VGS = 0V, C iss C rss 12.0 ID= 35A SHORTED C oss = Cds + C gd 10000 C, Capacitance(pF) f = 1 MHZ =C + C , C gs gd ds = Cgd V GS, Gate-to-Source Voltage (V) 100000 Ciss 1000 Coss Crss 100 10 1 10 100 V DS= 50V V DS= 20V 8.0 6.0 4.0 2.0 0.0 0 V DS, Drain-to-Source Voltage (V) 20 ID, Drain-to-Source Current (A) 1000 10.00 TJ = 25C 1.00 V GS = 0V 0.10 0.4 0.6 0.8 1.0 1.2 1.4 V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 80 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 TJ = 175C 0.2 60 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 100.00 40 QG Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) V DS= 80V 10.0 1.6 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec 0.1 1 10 100 1000 V DS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF3710Z/S 60 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 ID, Drain Current (A) 50 40 30 20 10 0 2.5 ID = 59A V GS = 10V 2.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 -60 -40 -20 0 TC , Case Temperature (C) 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 1 AUIRF3710Z/S 300 DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) 15V ID 15A 25A BOTTOM 35A TOP 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS V GS(th) Gate threshold Voltage (V) 5.0 4.0 3.0 ID = 250A 2.0 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 TJ , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com Fig 14. Threshold Voltage vs. Temperature 7 AUIRF3710Z/S 1000 Duty Cycle = Single Pulse Avalanche Current (A) 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 35A 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF3710Z/S D.U.T Driver Gate Drive + * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - D= Period P.W. + VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS V GS RG RD D.U.T. + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3710Z/S TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF3710Z YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Leadfree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3710Z/S D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUIRF3710ZS YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Leadfree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF3710Z/S D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 12 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 www.irf.com AUIRF3710Z/S Ordering Information Base part number Package Type AUIRF3710Z AUIRF3710ZS AUIRF3710ZS AUIRF3710ZS www.irf.com TO-220 D2Pak Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF3710ZS Tube 50 AUIRF3710ZS Tape and Reel Left 800 AUIRF3710ZSTRL Tape and Reel Right 800 AUIRF3710ZSTRR 13 AUIRF3710Z/S IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. 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