3/19/10
www.irf.com 1
AUIRF3710Z
AUIRF3710ZS
HEXFET® Power MOSFET
S
D
G
VDSS = 100V
RDS(on) = 18mΩ
ID = 59A
Features
OLow On-Resistance
O175°C Operating Temperature
OFast Switching
OFully Avalanche Rated
ORepetitive Avalanche Allowed up to Tjmax
OLead-Free, RoHS Compliant
OAutomotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
D2Pak
AUIRF3710ZS
TO-220AB
AUIRF3710Z
PD - 97470
AUTOMOTIVE GRADE
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation
ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
c
PD @TC = 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
VGS Gate-to-Source Voltage V
EAS Single Pulse Avalanche Energy (Thermally limited)
d
mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value
h
IAR Avalanche Current
c
A
EAR Repetitive Avalanche Energy mJ
TJ Operating Junction and °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
k
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case
j
––– 0.92 °C/W
RθCS Case-to-Sink, Flat, Greased Surface 0.50 –––
RθJA Junction-to-Ambient (PCB Mount, steady state) ––– 40
10 lbf•in (1.1N•m)
160
1.1
± 20
170
200
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
Max.
59
42
240
AUIRF3710Z/S
2www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 35A, di/dt ≤ 380A/μs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
This value determined from sample failure population,
starting TJ = 25°C, L = 0.27mH,RG = 25Ω, IAS = 35A, VGS =10V
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220AB pakcage.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter Min. T
y
p. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V
ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 14 18 mΩ
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 35 ––– ––– S
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA
––– ––– 250
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
QgTotal Gate Charge ––– 82 120 nC
Qgs Gate-to-Source Charge ––– 19 28
Qgd Gate-to-Drain ("Miller") Charge ––– 27 40
td(on) Turn-On Delay Time ––– 17 ––– ns
trRise Time ––– 77 –––
td(off) Turn-Off Delay Time ––– 41 –––
tfFall Time ––– 56 –––
LDInternal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 2900 ––– pF
Coss Output Capacitance ––– 290 –––
Crss Reverse Transfer Capacitance ––– 150 –––
Coss Output Capacitance ––– 1130 –––
Coss Output Capacitance ––– 170 –––
Coss eff. Effective Output Capacitance ––– 280 –––
Diode Characteristics
Parameter Min. T
y
p. Max. Units
ISContinuous Source Current ––– ––– 59
(Body Diode) A
ISM Pulsed Source Current ––– ––– 240
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time –––5075ns
Qrr Reverse Recovery Charge ––– 100 160 nC
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 35A
f
VDS = VGS, ID = 250μA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
RG = 6.8Ω
ID = 35A
VDS = 50V, ID = 35A
VDD = 50V
ID = 35A
VGS = 20V
VGS = -20V
TJ = 25°C, IF = 35A, VDD = 25V
di/dt = 100A/μs
f
TJ = 25°C, IS = 35A, VGS = 0V
f
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 80V
VDS = 80V
VGS = 10V
f
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 10V
f
AUIRF3710Z/S
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Qualification Information†
TO-220AB N/A
D2 PAK MSL1
RoHS Compliant Yes
ESD
Machine Model Class M4
AEC-Q101-002
Human Body Model Class H1C
AEC-Q101-001
Charged Device Model Class C3
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consu mer qualification level is
granted by extension of the higher Automotive level.
 Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
AUIRF3710Z/S
4www.irf.com
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance
vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20μs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20μs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
0
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 25V
20μs PULSE WIDTH
010 20 30 40 50 60 70
ID, Drain-to-Source Current (A)
0
20
40
60
80
100
120
GFS, Forward Transconductance (S)
TJ = 25°C
TJ = 175°C
VDS = 15V
20μs PULSE WIDTH
AUIRF3710Z/S
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 20406080100
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 35A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
100μsec
AUIRF3710Z/S
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Normalized On-Resistance
vs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
ID, Drain Current (A)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 59A
VGS = 10V
AUIRF3710Z/S
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QG
QGS QGD
VG
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
E
AS , Single Pulse Avalanche Energy (mJ)
ID
TOP 15A
25A
BOTTOM 35A
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
5.0
VGS(th) Gate threshold Voltage (V)
ID = 250μA
AUIRF3710Z/S
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Fig 15. Typical Avalanche Current vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ΔTj = 25°C due to
avalanche losses
0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
E
AR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 35A
AUIRF3710Z/S
www.irf.com 9
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
AUIRF3710Z/S
10 www.irf.com
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF3710Z
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
Part Number
IR Logo
Lot Code
AUIRF3710Z/S
www.irf.com 11
D2Pak Part Marking Information
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRF3710ZS
YWWA
XX or XX
Date Code
Y= Year
WW= Work Week
A= Automotive, Leadfree
Part Number
IR Logo
Lot Code
AUIRF3710Z/S
12 www.irf.com
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D2Pak Tape & Reel Infomation
AUIRF3710Z/S
www.irf.com 13
Ordering Information
Base
p
art number Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRF3710Z TO-220 Tube 50 AUIRF3710ZS
AUIRF3710ZS D2Pak Tube 50 AUIRF3710ZS
AUIRF3710ZS Tape and Reel Left 800 AUIRF3710ZSTRL
AUIRF3710ZS Tape and Reel Right 800 AUIRF3710ZSTRR
AUIRF3710Z/S
14 www.irf.com
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(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to
its products and services at any time and to discontinue any product or services without notice. Part numbers
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conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR
deems necessary to support this warranty. Except where mandated by government requirements, testing of all
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