MMBT2222A
Silicon NPN Transistor
General Purpose Amp
SOT−23 Type Surface Mount Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO 75V.......................................................
Collector−Emitter Voltage, VCEO 40V......................................................
Emitter−Base Voltage, VEBO 6V..........................................................
Continuous Collector Current, IC600mA..................................................
Total Device Dissipation (FR−5 Board, Note 1), PD225mW.................................
Derate above +25C 1.8mW/C....................................................
Thermal Resistance, Junction−to−Ambient (FR−5 Board, Note 1), RthJA 556C/W..............
Total Device Dissipation (Alumina Substrate, Note 2), PD300mW............................
Derate above +25C 2.4mW/C....................................................
Thermal Resistance, Junction−to−Ambient (Alumina Substrate, Note 2), RthJA 417C/W........
Operating Junction Temperature Range, TJ−55 to +150C.................................
Storage Temperature Range, Tstg −55 to +150C.........................................
Note 1. FR−5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 75 − − V
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0 40 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 6− − V
Collector Cutoff Current ICBO VCB = 60V, IE = 0 − − 0.01 A
VCB = 60V, IE = 0, TA = +125C− − 10 A
ICEX VCE = 60V, VEB(off) = 3V − − 10 nA
Emitter Cutoff Current IEBO VEB = 3V, IC = 0 − − 10 nA
Base Cutoff Current IBL VCE = 60V, VEB(off) = 3V − − 20 nA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 3)
DC Current Gain hFE VCE = 10V, IC = 0.1mA 35 − −
VCE = 10V, IC = 1mA 50 − −
VCE = 10V, IC = 10mA 75 − −
VCE = 10V, IC = 10mA, TA = −55C 35 − −
VCE = 1V, IC = 150mA 50 − −
VCE = 10V, IC = 150mA 100 −300
VCE = 10V, IC = 500mA 40 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA − − 0.3 V
IC = 500mA, IB = 50mA − − 1.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA 0.6 −1.2 V
IC = 500mA, IB = 50mA − − 2.0 V
Small−Signal Characteristics
Current Gain−Bandwidth Product fTIC = 20mA, VCB = 20V, f = 100MHz 300 − − MHz
Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz − − 8 pF
Input Capacitance Cibo VEB = 0.5V, IC = 0, f = 1MHz − − 25 pF
Input Impedance hie VCE = 10V, IC = 1mA, f = 1kHz 2−8 k
VCE = 10V, IC = 10mA, f = 1kHz 0.25 −1.25 k
Voltage Feedback Ratio hre VCE = 10V, IC = 1mA, f = 1kHz − − 8x 104
VCE = 10V, IC = 10mA, f = 1kHz − − 4x 104
Small−Signal Current Gain hfe VCE = 10V, IC = 1mA, f = 1kHz 50 −300
VCE = 10V, IC = 10mA, f = 1kHz 75 −375
Output Admittance hoe VCE = 10V, IC = 1mA, f = 1kHz 5−35 mhos
VCE = 10V, IC = 10mA, f = 1kHz 25 −200 mhos
Collector−Base Time Constant rb’CcVCB = 20V, IE = 20mA, f = 31.8MHz − − 150 ps
Noise Fiqure NF IC = 100A, VCE = 10V,
RS = 1k,,f = 1kHz
− − 4 dB
Switching Characteristics
Delay Time tdVCC = 30V, IC = 150mA,
VBE(off) = 0.5V, IB1 = 15mA
− − 10 ns
Rise Time tr− − 25 ns
Storage Time tsVCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
− − 225 ns
Fall Time tf− − 60 ns
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
.098
(2.5)
Max
.074 (1.9)
.118 (3.0) Max .051
(1.3)
.043 (1.1)
.007 (0.2)
.016 (0.48)
.037 (0.95)
B
C
E
