BLS6G2731S-130,112-CUT TAPE\"\" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

130 W LDMOS power transistor intende d for radar application s in the 2.7 GHz to 3.1 GHz

range.

1.2 Features and benefits

T yp ical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply volt age

of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:

Output power = 130 W

Power gain = 12 dB

Efficiency = 50 %

Easy power control

Integrated ESD protection

High flexibility with respect to pulse formats

Excellent ruggedness

High efficiency

Excellent thermal stability

Designed for broadband operation (2.7 GHz to 3.1 GHz)

Internally matched for ease of use

Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

1.3 Applications

S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency

range

BLS6G2731S-130

LDMOS S-band radar power transistor

Rev. 2 — 18 November 2010 Product data sheet

Table 1. Typical perf ormance

Typical RF performance at Tcase =25

C; tp = 300

= 10 %; IDq = 100 mA; in a class-AB

production test circuit.

Mode of operation f VDS PLGpηDtrtf

(GHz) (V) (W) (dB) (%) (ns) (ns)

pulsed RF 2.7 to 3.1 32 130 12 50 20 6

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Product data sheet Rev. 2 — 18 November 2010 2 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

2. Pinning information

[1] Connected to flange.

3. Ordering information

4. Limiting values

5. Thermal characteristics

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1drain

2gate

3source [1] 3

sym11

Table 3. Ordering informati on

Type number Package

Name Description Version

BLS6G2731S-130 - ceramic earless flanged cavity package; 2 leads SOT922-1

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Min Max Unit

VDS drain-source voltage - 60 V

VGS gate-source voltage −0.5 +13 V

IDdrain current - 33 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 200 °C

Table 5. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Zth(j-mb) transient thermal impedance from junction

to mounting base Tcase =85°C; PL=130W

tp= 100 μs; δ = 10 % 0.23 K/W

tp= 200 μs; δ = 10 % 0.28 K/W

tp= 300 μs; δ = 10 % 0.32 K/W

tp= 100 μs; δ = 20 % 0.33 K/W

Product data sheet Rev. 2 — 18 November 2010 3 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

6. Characteristics

7. Application information

Table 6. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; I

D=0.6mA 60 - - V

VGS(th) gate-source threshold voltage VDS = 10 V; ID= 180 mA 1.4 1.8 2.4 V

IDSS drain leakage current VGS =0V; V

DS =28V - - 4.2 μA

IDSX drain cut-off current VGS =V

GS(th) + 3.75 V;

VDS =10V 27 33 - A

IGSS gate leakage current VGS =11V; V

DS = 0 V - - 450 nA

gfs forward transconductance VDS =10V; I

D=9A 8.1 13 - S

RDS(on) drai n - source on-state resi stance VGS =V

GS(th) + 3.75 V;

ID=6.3A - 0.085 0.135 Ω

Table 7. Application information

Mode of operation: pulsed RF; tp = 300

= 10 %; RF performance at VDS =32V; I

Dq = 100 mA;

Tcase =25

C; unless otherwise specified, in a class-AB production circuit.

Symbol Parameter Conditions Min Typ Max Unit

PLoutput power - 130 - W

VDD supply voltage PL=130W - - 32 V

Gppower gain PL=130W 10 12 - dB

RLin input return loss PL=130W 5.5 8 - dB

PL(1dB) output power at 1 dB gain compression - 140 - W

ηDdrain efficiency PL=130W 45 50 - %

Pdroop(pulse) pulse droop power PL=130W - 0 0.25 dB

trrise time PL= 130 W - 20 50 ns

tffall time PL=130W - 6 50 ns

Product data sheet Rev. 2 — 18 November 2010 4 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

7.1 Ruggedness in class-AB operation

The BLS6G2731S-130 is capable of withstanding a load mismatch corresponding to

VSWR = 5 : 1 through all phases under the following conditions: VDS =32V;

IDq =100mA; P

L=130W; t

p = 300 μs; δ = 10 %.

Table 8. Typical imp ed ance

f ZSZL

(GHz) (Ω) (Ω)

2.7 3.2 − j6.5 4.5 − j3.6

2.8 4.4 − j6.2 3.5 − j3.8

2.9 5.6 − j7.3 3.7 − j3.1

3.0 4.9 − j9.2 3.0 − j3.3

3.1 3 − j9.5 2.8 − j3.6

Fig 1. Definition of transis tor imp e da nc e

001aaf05

drain

gate

Product data sheet Rev. 2 — 18 November 2010 5 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

7.2 Graphs

VDS =32V; I

Dq = 100 mA; tp = 300 μs; δ = 10 %.

(1) f = 2.7 GHz

(2) f = 2.9 GHz

(3) f = 3.1 GHz

VDS =32V; I

Dq = 100 mA; tp = 100 μs; δ = 20 %.

(1) f = 2.7 GHz

(2) f = 2.9 GHz

(3) f = 3.1 GHz

Fig 2. Power gain as a functio n of load powe r; typical

values Fig 3. Power gain as a function of load power; typical

values

VDS =32V; I

Dq = 100 mA; tp = 300 μs; δ = 10 %.

(1) f = 2.7 GHz

(2) f = 2.9 GHz

(3) f = 3.1 GHz

VDS =32V; I

Dq = 100 mA; tp = 100 μs; δ = 20 %.

(1) f = 2.7 GHz

(2) f = 2.9 GHz

(3) f = 3.1 GHz

Fig 4. Drain efficiency as a func tion of load power;

typical valu e s Fig 5. Drain efficiency as a function of load power;

typical values

PL (W)

0 20015050 100

001aan051

(dB)

(1)

(2)

(3)

PL (W)

0 20015050 100

001aan052

(dB)

(1)

(2)

(3)

PL (W)

0 20015050 100

001aan053

ηD

(%)

(1)

(2)

(3)

PL (W)

0 20015050 100

001aan054

ηD

(%)

(1)

(2)

(3)

Product data sheet Rev. 2 — 18 November 2010 6 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

VDS =32V; I

Dq = 100 mA; tp = 300 μs; δ = 10 %.

(1) f = 2.7 GHz

(2) f = 2.9 GHz

(3) f = 3.1 GHz

VDS =32V; I

Dq = 100 mA; tp = 100 μs; δ = 20 %.

(1) f = 2.7 GHz

(2) f = 2.9 GHz

(3) f = 3.1 GHz

Fig 6. Load power as a function of input power;

typical valu e s Fig 7. Load power as a function of input power;

typical values

PL = 130 W; VDS =32V; I

Dq = 100 mA; tp= 300 μs;

δ=10%. PL = 130 W; VDS =32V; I

Dq = 100 mA; tp= 100 μs;

δ=20%.

Fig 8. Power gain and drain efficiency as function of

frequency; typical values Fig 9. Power gain and drain efficiency as function of

frequency; typical values

Pi (W)

020168124

001aan055

120

160

200

(W)

(1)

(2)

(3)

Pi (W)

020168124

001aan056

120

160

200

(W)

(1)

(2)

(3)

f (GHz)

2.65 3.153.052.85 2.952.75

001aan057

(dB)

ηD

(%)

ηD

f (GHz)

2.65 3.153.052.85 2.952.75

001aan058

(dB)

ηD

(%)

ηD

Product data sheet Rev. 2 — 18 November 2010 7 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

8. Test information

[1] American Technical Ceramics type 100A or capacitor of same quality.

[2] American Technical Ceramics type 700A or capacitor of same quality.

Table 9. List of components

Printed-Circuit Board (PCB): Rogers Duroid 600 6; thickness = 0.64 mm;

r = 6.15; thickness of

copper plating = 0.035 mm.

For test circuit see Figure 10.

Component Description Value Remarks

C1, C2, C3, C4 multilayer ceramic chip capacitor 20 pF [1]

C5, C6 multilayer ceramic chip capacitor 1 nF [2]

C7 electrolytic capacitor 470 μF; 63 V

R1 SMD resistor 10 Ω

Printed-Circuit Board (PCB): Rogers Duroid 6006; thickness = 0.64 mm; εr = 6.15; thickness of

copper plating = 0.035 mm.

See Table 9 for a list of components.

Fig 10. Component layout for test circu it

001aan05

BLS6G2731S 130

OUTPUT REV2

NXP

BLS6G2731S 130

INPUT REV3

NXP

stubs

1 mm

Product data sheet Rev. 2 — 18 November 2010 8 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

9. Package outline

Fig 11. Package outline SOT922-1

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT922-1

SOT922-

05-11-14

05-11-22

DIMENSIONS (mm are the original dimensions)

eramic earless flanged cavity package; 2 leads

0 5 10 mm

scale

UNIT A

12.42

12.17

0.15

0.10

17.58

17.22

9.27

9.02

15.62

14.34

9.53

9.27

4.22

3.53

c U2

0.25

1.32

0.81

17.75

17.50

3.05

2.03

1.70

1.45

9.53

9.27

inches 0.489

0.479

0.006

0.004

0.692

0.678

17.50

17.25

0.689

0.679

0.365

0.355

0.615

0.525

0.375

0.365

0.166

0.139 0.010

0.052

0.032

0.699

0.689

0.12

0.08

0.067

0.057

0.375

0.365

Dw2 M M

Product data sheet Rev. 2 — 18 November 2010 9 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

10. Abbreviations

11. Revision history

Table 10. Abbreviations

Acronym Description

LDMOS Laterally Diffused Metal-Oxide Semiconductor

RF Radio Frequency

VSWR Voltage Standing-Wave Ratio

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BLS6G2731S-130 v.2 20101118 Product data sheet - BLS6G2731S-130 v.1

Modifications: •Table 1 on page 1: Some values have been changed.

•Section 1.2 on page 1: The value of Gp has been changed.

•Table 7 on page 3: Some values have been changed.

•Table 8 on page 4: Values have been entered.

•Section 7.2 on page 5: Section with graphs has been added.

•Section 8 on page 7: Test information has been added.

BLS6G2731S-130 v.1 20100726 Objective data sheet - -

Product data sheet Rev. 2 — 18 November 2010 10 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

12. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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operation of the device at these or any other conditions above those given in

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Characteristics sections of this document is not warranted. Constant or

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 18 November 2010 11 of 12

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

Non-automotive qualified products — Unless this data sheet expressly

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In the event that customer uses the product for design-in and use in

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are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BLS6G2731S-130

LDMOS S-band radar power transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 18 Nove mber 2010

Document identifi er: BLS6G2731S-130

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

7 Application information. . . . . . . . . . . . . . . . . . . 3

7.1 Ruggedness in class-AB operation . . . . . . . . . 4

7.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12