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FOD3184 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Features Applications High noise immunity characterized by 50kV/s (Typ.) common mode rejection @ VCM = 2,000V Guaranteed operating temperature range of -40C to +100C 3A peak output current for medium power MOSFET/IGBT Fast switching speed - 210ns max. propagation delay - 65ns max pulse width distortion Fast output rise/fall time - Offers lower dynamic power dissipation 250kHz maximum switching speed Wide VDD operating range from 15V to 30V Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output) Under voltage lockout protection (UVLO) with hysteresis - optimized for driving IGBTs Safety and regulatory approvals - UL1577, 5,000 VACRMS for 1 min. - DIN EN/IEC 60747-5-2, 1,414 peak working insulation voltage * Minimum creepage distance of 8.0mm * Minimum clearance distance of 8mm to 16mm (option TV or TSV) * Minimum insulation thickness of 0.5mm Functional Block Diagram Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET/IGBT gate drive Description The FOD3184 is a 3A Output Current, High Speed MOSFET/IGBT Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. The device is packaged in an 8-pin dual in-line housing compatible with 260C reflow processes for lead free solder compliance. Package Outlines NC 1 8 VDD ANODE 2 7 VO2 8 8 1 1 CATHODE 3 6 VO1 NC 4 5 VSS 8 Note: A 0.1F bypass capacitor must be connected between pins 5 and 8. (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 8 1 1 www.fairchildsemi.com FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler February 2011 LED VDD - VSS "Positive Going" (Turn-on) VDD - VSS "Negative Going" (Turn-off) VO Off 0V to 30V 0V to 30V Low On 0V to 11.5V 0V to 10V Low On 11.5V to 13.5V 10V to 12V Transition On 13.5V to 30V 12V to 30V High Pin Definitions Pin # Name Description 1 NC 2 Anode Not Connected 3 Cathode 4 NC Not Connected LED Anode LED Cathode 5 VSS Negative Supply Voltage 6 VO2 Output Voltage 2 (internally connected to VO1) 7 VO1 Output Voltage 1 8 VDD Positive Supply Voltage (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 2 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Truth Table As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 For Rated Mains Voltage < 150Vrms I-IV For Rated Mains Voltage < 300Vrms I-IV For Rated Mains Voltage < 450Vrms I-III For Rated Mains Voltage < 600Vrms I-III For Rated Mains Voltage < 1000Vrms (Option T, TS) I-III Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 VPR Input to Output Test Voltage, Method b, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 sec., Partial Discharge < 5pC 2651 Input to Output Test Voltage, Method a, VIORM x 1.5 = VPR, Type and Sample Test with tm = 60 sec.,Partial Discharge < 5 pC 2121 VIORM Max Working Insulation Voltage 1,414 Vpeak VIOTM Highest Allowable Over Voltage 6000 Vpeak External Creepage 8 mm External Clearance 7.4 mm 10.16 mm 0.5 mm Case Temperature 150 C Input Current 25 mA Output Power 250 mW 109 External Clearance (for Option T or TS - 0.4" Lead Spacing) Insulation Thickness Safety Limit Values - Maximum Values Allowed in the Event of a Failure TCase IS,INPUT PS,OUTPUT RIO Insulation Resistance at TS, VIO = 500V (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 3 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 C TOPR Operating Temperature -40 to +100 C Junction Temperature -40 to +125 C 260 for 10 sec. C TJ TSOL Lead Solder Temperature - Wave solder (Refer to Reflow Temperature Profile, pg. 22) IF(AVG) Average Input Current(1) 25 mA IF(tr, tf) LED Current Minimum Rate of Rise/Fall 250 ns VR Reverse Input Voltage 5 V IOH(PEAK) "High" Peak Output Current(2) 3 A IOL(PEAK) "Low" Peak Output Current(2) 3 A VDD - VSS Supply Voltage -0.5 to 35 V VO(PEAK) Output Voltage 0 to VDD V 250 mW 295 mW Dissipation(3) PO Output Power PD Total Power Dissipation(3) Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Value Units Power Supply 15 to 30 V IF(ON) Input Current (ON) 10 to 16 mA VF(OFF) Input Voltage (OFF) -3.0 to 0.8 V VDD - VSS Parameter (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 4 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Absolute Maximum Ratings (TA = 25C unless otherwise specified) Symbol Parameter IOH High Level Output Current IOL Low Level Output Current Test Conditions Min. VOH = (VDD - VSS - 1V) Typ. Max. Unit -0.9 -0.5 A VOH = (VDD - VSS - 6V) Output Voltage(4)(5) VOH High Level VOL Low Level Output Voltage(4)(5) -2.5 VOL = (VDD - VSS + 1V) 0.5 VOL = (VDD - VSS + 6V) 2.5 1 A IO = -100mA, IF = 10mA VDD - 0.5 IO = -2.5A, IF = 10mA V VDD - 7 IO = 100mA , IF = 0mA VSS + 0.5 IO = 2.5A, IF = 0mA V VSS + 7 IDDH High Level Supply Current Output Open, IF = 10 to 16mA 2.6 3.5 mA IDDL Low Level Supply Current Output Open, VF = -3.0 to 0.8V 2.5 3.5 mA IFLH Threshold Input Current Low to High IO = 0mA, VO > 5V 3.0 7.5 mA VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 5V 0.8 Input Forward Voltage IF = 10mA 1.1 VF / TA Temperature Coefficient of Forward Voltage IF = 10mA VUVLO+ UVLO Threshold VO > 5V, IF = 10mA 11.5 13.0 13.5 V VO < 5V, IF = 10mA 10.0 11.5 12.0 V VF VUVLO- Input Reverse Breakdown Voltage IR = 10A CIN Input Capacitance f = 1MHz, VF = 0V (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 1.43 1.8 -1.5 UVLOHYST UVLO Hysteresis BVR V V mV/C 1.5 V 25 pF 5 V www.fairchildsemi.com 5 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Electrical-Optical Characteristics (DC) Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25C, unless otherwise specified. Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = 0V, TA = 25C, unless otherwise specified. Symbol Parameter Test Conditions Min. tPLH Propagation Delay Time to High Output Level(6) tPHL Propagation Delay Time to Low Output Level(6) PWD Pulse Width Distortion(7) IF = 10mA, Rg = 10, f = 250kHz, Duty Cycle = 50%, Cg = 10nF Propagation Delay Difference Between Any PDD (tPHL - tPLH) Two Parts(8) tr Rise Time tf Fall Time tUVLO ON UVLO Turn On Delay tUVLO OFF UVLO Turn Off Delay Typ.* Max. Unit 50 120 210 50 145 210 ns 35 65 ns 90 ns -90 CL = 10nF, Rg = 10 | CMH | Output High Level Common Mode Transient Immunity(9) (10) TA = +25C, If = 10mA to 16mA, VCM = 2kV, VDD = 30V 35 | CML | Output Low Level Common Mode Transient Immunity(9) (11) TA = +25C, Vf = 0V, VCM = 2kV, VDD = 30V 35 ns 38 ns 24 ns 2.0 s 0.3 s 50 kV/s 50 kV/s *Typical values at TA = 25C Isolation Characteristics Symbol Parameter Test Conditions VISO Withstand Isolation Voltage(12) (13) TA = 25C, R.H. < 50%, t = 1min., II-O 10A RI-O Resistance (input to output)(13) VI-O = 500V CI-O Capacitance (input to output) Freq. = 1MHz Min. Typ.* 5000 Max. Unit Vrms 1011 1 pF *Typical values at TA = 25C (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 6 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Switching Characteristics 5. 6. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 7. PWD is defined as | tPHL - tPLH | for any given device. The difference between tPHL and tPLH between any two FOD3184 parts under same operating conditions, with equal loads. 9. Pin 1 and 4 need to be connected to LED common. 10. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 15V). 8. 11. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 12. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms, 60Hz for 1 second (leakage detection current limit II-O < 10A). 13. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 7 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Notes: 1. Derate linearly above +79C free air temperature at a rate of 0.37mA/C. 2. Maximum pulse width = 10s. 3 Derate linearly above +79C, free air temperature at the rate of 5.73mW/C. 4. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VDD as IOH approaches zero amps. Fig. 2 Output High Voltage Drop vs. Ambient Temperature 0.5 (VOH - VDD) - HIGH OUTPUT VOLTAGE DROP (V) (VOH - VDD) - HIGH OUTPUT VOLTAGE DROP (V) Fig. 1 Output High Voltage Drop vs. Output High Current Frequency = 200Hz Duty Cycle = 0.1% IF = 10mA to 16mA VDD = 15V to 30V VSS = 0V 0 -0.5 -1.0 TA = -40C -1.5 TA = 25C -2.0 TA =100C -2.5 -3.-0 -3.5 0 0.5 1.0 1.5 2.0 2.5 0.00 -0.05 VDD = 15V to 30V VSS = 0V IF = 10mA to 16mA IO = -100mA -0.10 -0.15 -0.20 -0.25 -0.30 -40 -20 Fig. 3 Output High Current vs. Ambient Temperature 40 60 80 100 8 Frequency = 200Hz Duty Cycle = 0.2% IF = 10mA to 16mA VDD = 15V to 30V IOH - OUTPUT HIGH CURRENT (A) IOH - OUTPUT HIGH CURRENT (A) 20 Fig. 4 Output High Current vs. Ambient Temperature 8 6 VO = 6V 4 VO = 3V 2 0 -40 -20 0 20 40 60 80 Frequency = 100Hz Duty Cycle = 0.5% IF = 10mA to 16mA VDD = 15V to 30V 6 VO = 6V 4 VO = 3V 2 0 -40 100 -20 TA - AMBIENT TEMPERATURE (C) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Fig. 5 Output Low Voltage vs. Output High Current Fig. 6 Output Low Voltage vs. Ambient Temperature 4 0.00 Frequency = 200Hz Duty Cycle = 99.9% VF(off) = 0.8V VDD = 15V to 30V VSS = 0V 3 TA =100C VOL - OUTPUT LOW VOLTAGE (V) VOL - OUTPUT LOW VOLTAGE (V) 0 TA - AMBIENT TEMPERATURE (C) IOH - OUTPUT HIGH CURRENT (A) TA = 25C 2 TA = -40C 1 0.5 1.0 1.5 2.0 2.5 IOH - OUTPUT HIGH CURRENT (A) (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 VDD = 15V to 30V VSS = 0V VF = -3V to 0.8V IO = -100mA -0.10 -0.15 -0.20 -0.25 -0.30 -40 0 0 -0.05 -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) www.fairchildsemi.com 8 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Typical Performance Curves Fig. 7 Output Low Current vs. Ambient Temperature Fig. 8 Output Low Current vs. Ambient Temperature 8 Frequency = 200Hz Duty Cycle = 99.8% VF = 0.8V VDD = 15V to 30V IOL - OUTPUT LOW CURRENT (A) IOL - OUTPUT LOW CURRENT (A) 8 6 VO = 6V 4 VO = 3V 2 0 -40 -20 0 20 40 60 80 Frequency = 100Hz Duty Cycle = 99.5% VF = 0.8V VDD = 15V to 30V 6 VO = 6V 4 VO = 3V 2 0 -40 100 TA - AMBIENT TEMPERATURE (C) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Fig. 10 Supply Current vs. Supply Voltage Fig. 9 Supply Current vs. Ambient Temperature 3.6 3.6 IDD - SUPPLY CURRENT (mA) VDD = 15V to 30V VSS = 0V IF = 0mA (for IDDL) IF = 10mA (for IDDH) 3.4 IDD - SUPPLY CURRENT (mA) -20 3.2 IDDH(30V) 3.0 IDDL(30V) 2.8 IDDH(15V) 2.6 IDDL(15V) IF = 0mA (for IDDL) IF = 10mA (for IDDH) VSS = 0V TA = 25C 3.2 IDDH 2.8 IDDL 2.4 2.4 2.2 -40 2.0 -20 0 20 40 60 80 15 100 20 30 Fig. 12 Propagation Delay vs. Supply Voltage 250 3.6 VDD = 15V to 30V VSS = 0V Output = Open tP - PROPAGATION DELAY (ns) IFLH - LOW-to-HIGH INPUT CURRENT THRESHOLD (mA) Fig. 11 Low-to-High Input Current Threshold vs. Ambient Temperature 3.4 25 VDD - SUPPLY VOLTAGE (V) TA - AMBIENT TEMPERATURE (C) 3.2 3.0 2.8 2.6 IF = 10mA to 16mA TA = 25C RG = 10 CG = 10nF Duty Cycle = 50% Frequency = 250kHz 200 150 tPHL tPLH 100 2.4 2.2 -40 50 -20 0 20 40 60 80 15 100 (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 18 21 24 27 30 VDD - SUPPLY VOLTAGE (V) TA - AMBIENT TEMPERATURE (C) www.fairchildsemi.com 9 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Typical Performance Curves (Continued) Fig. 13 Propagation Delay vs. LED Forward Current Fig. 14 Propagation Delay vs. Ambient Temperature 450 VDD = 15V to 30V TA = 25C RG = 10 CG = 10nF Duty Cycle = 50% Frequency = 250kHz 200 tP - PROPAGATION DELAY (ns) tP - PROPAGATION DELAY (ns) 250 150 tPHL tPLH 100 IF = 10mA to 16mA VDD = 15V to 30V RG = 10 CG = 10nF Duty Cycle = 50% Frequency = 250kHz 350 250 tPHL 150 tPLH 50 6 8 10 12 14 50 -40 18 IF - FORWARD LED CURRENT (mA) 20 40 60 80 100 Fig. 16 Propagation Delay vs. Series Load Capacitance 450 450 IF = 10mA to 16mA VDD = 15V to 30V CG = 10nF Duty Cycle = 50% Frequency = 250kHz tP - PROPAGATION DELAY (ns) tP - PROPAGATION DELAY (ns) 0 TA - AMBIENT TEMPERATURE (C) Fig. 15 Propagation Delay vs. Series Load Resistance 350 250 150 -20 tPHL IF = 10mA to 16mA VDD = 15V to 30V RG = 10 Duty Cycle = 50% Frequency = 250kHz 350 250 150 tPHL tPLH tPLH 50 50 0 10 20 30 40 50 0 RG - SERIES LOAD RESISTANCE () 20 40 60 80 100 CG - SERIES LOAD CAPACITANCE (nF) Fig. 17 Transfer Characteristics Fig. 18 Input Forward Current vs. Forward Voltage 35 100 VDD = 30V TA = 25C IF - FORWARE CURRENT (mA) VO - OUTPUT VOLTAGE (V) 30 25 20 15 10 10 1 TA =100C 0.1 -40C 25C 0.01 5 0 0 0.5 1.0 1.5 2.0 0.001 0.6 2.5 IF - FORWARD LED CURRENT (mA) (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 0.8 1.0 1.2 1.4 1.6 1.8 VR - FORWARE VOLTAGE (V) www.fairchildsemi.com 10 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Typical Performance Curves (Continued) FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Typical Performance Curves (Continued) Fig. 19 Under Voltage Lockout 20 VO - OUTPUT VOLTAGE (V) 18 16 14 (13.00V) 12 10 8 6 4 2 (11.40V) 0 0 5 10 15 20 (VDD - VSS) - SUPPLY VOLTAGE (V) (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 11 Power Supply + + C1 0.1F VDD = 15V to 30V C2 47F Pulse Generator PW = 4.99ms Period = 5ms ROUT = 50 1 8 2 7 3 6 Pulse-In Iol R2 100 D1 VOL LED-IFmon 4 Power Supply + + C3 0.1F V = 6V C4 47F 5 R1 100 To Scope Test Conditions: Frequency = 200Hz Duty Cycle = 99.8% VDD = 15V to 30V VSS = 0V VF(OFF) = -3.0V to 0.8V Figure 20. IOL Test Circuit Power Supply + + C1 0.1F VDD = 15V to 30V C2 47F Pulse Generator PW = 10s Period = 5ms ROUT = 50 1 8 2 7 Pulse-In + + C3 0.1F Ioh R2 100 3 6 4 5 Power Supply V = 6V - VOH LED-IFmon C4 47F D1 Current Probe To Scope R1 100 Test Conditions: Frequency = 200Hz Duty Cycle = 0.2% VDD = 15V to 30V VSS = 0V IF = 10mA to 16mA Figure 21. IOH Test Circuit (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 12 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit 1 8 2 7 0.1F + - IF = 10 to 16mA VO 6 3 VDD = 15 to 30V 100mA 4 5 Figure 22. VOH Test Circuit 1 8 2 7 100mA + - 0.1F 3 6 4 5 VDD = 15 to 30V VO Figure 23. VOL Test Circuit (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 13 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit (Continued) FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit (Continued) 1 8 2 7 0.1F IF = 10 to 16mA 3 6 4 5 + - VDD = 30V + - VDD = 30V VO Figure 24. IDDH Test Circuit + - 1 8 2 7 0.1F VF = -3.0 to 0.8V 3 6 4 5 VO Figure 25. IDDL Test Circuit (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 14 IF 1 8 2 7 3 6 4 5 0.1F + - VDD = 15 to 30V + - VDD = 15 to 30V VO > 5V Figure 26. IFLH Test Circuit + - 1 8 2 7 0.1F VF = -3.0 to 0.8V 3 6 4 5 VO Figure 27. VFHL Test Circuit 1 8 2 7 0.1F + - IF = 10mA 3 6 4 5 VO = 5V 15V or 30V VDD Ramp Figure 28. UVLO Test Circuit (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 15 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit (Continued) FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Test Circuit (Continued) 1 8 2 7 0.1F + - Probe F = 250kHz DC = 50% 3 6 4 5 VO + - VDD = 15 to 30V Rg = 10 Cg = 10nF 50 IF tr tf 90% 50% VOUT 10% tPLH tPHL Figure 29. tPHL, tPLH, tr and tf Test Circuit and Waveforms IF 1 8 2 7 A 0.1F + - B 5V + - 3 6 4 5 VDD = 30V VO +- VCM = 2,000V VCM 0V t VO VOH Switch at A: IF = 10mA VO VOL Switch at B: IF = 0mA Figure 30. CMR Test Circuit and Waveforms (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 16 Part Number Package Packing Method FOD3184 DIP 8-Pin Tube (50 units per tube) FOD3184S SMT 8-Pin (Lead Bend) Tube (50 units per tube) FOD3184SD SMT 8-Pin (Lead Bend) Tape and Reel (1,000 units per reel) FOD3184V DIP 8-Pin, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) FOD3184SV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tube (50 units per tube) FOD3184SDV SMT 8-Pin (Lead Bend), DIN EN/IEC 60747-5-2 option Tape and Reel (1,000 units per reel) FOD3184TV DIP 8-Pin, 0.4" Lead Spacing, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) FOD3184TSV SMT 8-Pin, 0.4" Lead Spacing, DIN EN/IEC 60747-5-2 option Tube (50 units per tube) FOD3184TSR2V SMT 8-Pin, 0.4" Lead Spacing, DIN EN/IEC 60747-5-2 option Tape and Reel (700 units per reel) Marking Information 1 3184 XX YY B V 3 2 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with DIN EN/IEC 60747-5-2 option - See order entry table) 4 Two digit year code, e.g., `11' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 www.fairchildsemi.com 17 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Ordering Information D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 0.3 Tape Thickness 0.30 0.05 P0 Sprocket Hole Pitch 4.0 0.1 D0 Sprocket Hole Diameter 1.55 0.05 E Sprocket Hole Location 1.75 0.10 F Pocket Location 7.5 0.1 2.0 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 0.1 10.30 0.20 B0 10.30 0.20 K0 4.90 0.20 W1 d R (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 Cover Tape Width 13.2 0.2 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10 Min. Bending Radius 30 www.fairchildsemi.com 18 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Carrier Tape Specifications - Option S D0 P0 t K0 P2 E F A0 W1 d P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 24.0 0.3 Tape Thickness 0.40 0.1 P0 Sprocket Hole Pitch 4.0 0.1 D0 Sprocket Hole Diameter 1.55 0.05 E Sprocket Hole Location 1.75 0.10 F Pocket Location 11.5 0.1 t 2.0 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 16.0 0.1 12.80 0.1 B0 10.35 0.1 K0 5.7 0.1 W1 d R (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 Cover Tape Width 21.0 0.1 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10 Min. Bending Radius 30 www.fairchildsemi.com 19 FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Carrier Tape Specifications - Option TS FOD3184 -- 3A Output Current, High Speed MOSFET/IGBT Gate Driver Optocoupler Reflow Profile Temperature (C) TP 260 240 TL 220 200 180 160 140 120 100 80 60 40 20 0 Max. Ramp-up Rate = 3C/S Max. Ramp-down Rate = 6C/S tP Tsmax tL Preheat Area Tsmin ts 120 240 360 Time 25C to Peak Time (seconds) Profile Freature Pb-Free Assembly Profile Temperature Min. (Tsmin) 150C Temperature Max. (Tsmax) 200C Time (tS) from (Tsmin to Tsmax) 60-120 seconds Ramp-up Rate (tL to tP) 3C/second max. Liquidous Temperature (TL) 217C Time (tL) Maintained Above (TL) 60-150 seconds Peak Body Package Temperature 260C +0C / -5C Time (tP) within 5C of 260C 30 seconds Ramp-down Rate (TP to TL) 6C/second max. Time 25C to Peak Temperature (c)2005 Fairchild Semiconductor Corporation FOD3184 Rev. 1.0.4 8 minutes max. www.fairchildsemi.com 20 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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