2N3904 Semiconductor NPN Silicon Transistor Descriptions * General small signal application * Switching application Features * Low collector saturation voltage * Collector output capacitance * Complementary pair with 2N3906 Ordering Information Type NO. Marking 2N3904 2N3904 Package Code TO-92 Outline Dimensions unit : mm 3.450.1 4.50.1 4.50.1 2.250.1 2.060.1 14.00.40 0.40.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.200.1 1 2 3 KST-9010-000 1 2N3904 Ta=25C Absolute maximum ratings Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 C Tstg -55~150 C Storage temperature range Ta=25C Electrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=10A, IE=0 60 - - V Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0 40 - - V Emitter-Base breakdown voltage BVEBO IE=10A, IC=0 6 - - V Collector cut-off current ICEX VCE=30V, VEB=3V - - 50 nA DC current gain hFE VCE=1V, IC=10mA 100 - 300 - VCE(sat) IC=50mA, IB=5mA - - 0.3 V fT VCE=20V, IC=10mA, f=100MHz 300 - - MHz VCB=5V, IE=0, f=1MHz - - 4 pF VCC=3Vdc, VBE(off)=0.5Vdc. IC=10mAdc, IB1=1mAdc - - 35 ns - - 35 ns VCC=3Vdc,IC=10mAdc, IB1=IB2=1mAdc - - 200 ns - - 50 ns Collector-Emitter saturation voltage Transition frequency Collector output capacitance Cob Delay time td Rise time tr Storage time ts Fall Time tf KST-9010-000 2 2N3904 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 hFE-IC Fig. 3 VCE(sat)-IC KST-9010-000 3